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BTW68-200

Description
HIGH SURGE CAPABILITY
CategoryAnalog mixed-signal IC    Trigger device   
File Size65KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BTW68-200 Overview

HIGH SURGE CAPABILITY

BTW68-200 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresUL RECOGNIZED, HIGH RELIABILITY
Shell connectionISOLATED
Nominal circuit commutation break time100 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage250 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current75 mA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum leakage current3 mA
On-state non-repetitive peak current420 A
Number of components1
Number of terminals3
Maximum on-state current16000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current30 A
Maximum repetitive peak off-state leakage current20 µA
Off-state repetitive peak voltage200 V
Repeated peak reverse voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
BTW 68 (N)
SCR
.
.
.
.
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 68 Serie :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTW 68 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
RMS on-state current
(180° conduction angle)
Average
on-state
current
(180°
conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2 t value
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
BTW 68
BTW 68 N
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
Tc=80°C
Tc=85°C
tp=8.3 ms
tp=10 ms
I2t
dI/dt
Tstg
Tj
Tl
tp=10 ms
Value
30
35
19
22
420
400
800
100
- 40 to + 150
- 40 to + 125
230
A2s
A/µs
°C
°C
°C
Unit
A
A
A
K
A
G
TOP 3
(Plastic)
Symbol
Parameter
BTW 68
200
400
400
BTW 68 / BTW 68 N
600
600
800
800
1000
1000
1200
1200
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
200
V
March 1995
1/5
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