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LTC1155IS8#TR

Description
Gate Drivers LTC1155 - Dual High Side Micropower MOSFET Driver
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size238KB,16 Pages
ManufacturerADI
Websitehttps://www.analog.com
Download Datasheet Parametric Compare View All

LTC1155IS8#TR Overview

Gate Drivers LTC1155 - Dual High Side Micropower MOSFET Driver

LTC1155IS8#TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerADI
package instructionSOP,
Reach Compliance Codenot_compliant
ECCN codeEAR99
high side driverYES
Interface integrated circuit typeBUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 codeR-PDSO-G8
JESD-609 codee0
length4.9 mm
Humidity sensitivity level1
Number of functions2
Number of terminals8
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum supply voltage18 V
Minimum supply voltage4.5 V
Nominal supply voltage5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
Disconnect time60 µs
connection time2000 µs
width3.9 mm
LTC1155
Dual High Side
Micropower MOSFET Driver
FEATURES
n
n
n
n
n
n
n
n
n
n
DESCRIPTION
The
LTC
®
1155
dual high side gate driver allows using low
cost N-channel FETs for high side switching applications.
An internal charge pump boosts the gate above the posi-
tive rail, fully enhancing an N-channel MOSFET with no
external components. Micropower operation, with 8µA
standby current and 85µA operating current, allows use
in virtually all systems with maximum efficiency.
Included on-chip is overcurrent sensing to provide au-
tomatic shutdown in case of short circuits. A time delay
can be added in series with the current sense to prevent
false triggering on high in-rush loads such as capacitors
and incandescent lamps.
The LTC1155 operates off of a 4.5V to 18V supply input and
safely drives the gates of virtually all FETs. The LTC1155
is well suited for low voltage (battery-powered) applica-
tions, particularly where micropower “sleep” operation
is required.
The LTC1155 is available in both 8-pin PDIP and 8-pin
SO packages.
L,
LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
Fully Enhances N-Channel Power MOSFETs
8µA Standby Current
85µA ON Current
Short-Circuit Protection
Wide Power Supply Range: 4.5V to 18V
Controlled Switching ON and OFF Times
No External Charge Pump Components
Replaces P-Channel High Side MOSFETs
Compatible with Standard Logic Families
Available in 8-Pin SO Package
APPLICATIONS
n
n
n
n
n
n
n
Laptop Power Bus Switching
SCSI Termination Power Switching
Cellular Phone Power Management
P-Channel Switch Replacement
Relay and Solenoid Drivers
Low Frequency Half H-Bridge
Motor Speed and Torque Control
TYPICAL APPLICATION
Laptop Computer Power Bus Switch with Short-Circuit Protection
V
S
= 4.5V TO 5.5V
R
SEN
0.02
R
DLY
100k
C
DLY
0.1µF
DS1
G1
IN1
+
10µF
V
S
LTC1155
GND
DS2
G2
C
DLY
0.1µF
R
DLY
100k
R
SEN
0.02
Switch Voltage Drop
0.25
0.20
VOLTAGE DROP (V)
*IRLR034
5A
MAX
TTL, CMOS INPUT
POWER BUS
*IRLR034
5A
MAX
TTL, CMOS INPUT
0.15
IN2
0.10
0.05
0.00
µP
SYSTEM
GND
DISK
DRIVE
DISPLAY
PRINTER,
ETC.
0
1
2
OUTPUT CURRENT (A)
3
1155 TA02
*SURFACE MOUNT
1155 TA01
1155fb
For more information
www.linear.com/LTC1155
1

LTC1155IS8#TR Related Products

LTC1155IS8#TR LTC1155IN8
Description Gate Drivers LTC1155 - Dual High Side Micropower MOSFET Driver Gate Drivers LTC1155 - Dual High Side Micropower MOSFET Driver
Is it Rohs certified? incompatible incompatible
Maker ADI ADI
package instruction SOP, DIP,
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
high side driver YES YES
Interface integrated circuit type BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 code R-PDSO-G8 R-PDIP-T8
JESD-609 code e0 e0
Humidity sensitivity level 1 1
Number of functions 2 2
Number of terminals 8 8
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP DIP
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 235 NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum seat height 1.75 mm 3.937 mm
Maximum supply voltage 18 V 18 V
Minimum supply voltage 4.5 V 4.5 V
Nominal supply voltage 5 V 5 V
surface mount YES NO
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE
Terminal pitch 1.27 mm 2.54 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 20 NOT SPECIFIED
Disconnect time 60 µs 60 µs
connection time 2000 µs 2000 µs
width 3.9 mm 7.62 mm
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