Product Specification
PE4124
Product Description
The PE4124 is a high linearity, passive Quad MOSFET Mixer
for GSM 800 & Cellular Base Station Receivers and exhibits
high dynamic range performance over a broad LO drive range
up to 20 dBm. This mixer integrates passive matching networks
to provide single-ended interfaces for the RF and LO ports,
eliminating the need for external RF baluns or matching
networks. The PE4124 is optimized for frequency down-
conversion using low-side LO injection for GSM 800 & Cellular
Base Station applications, and is also suitable for use in
up-conversion applications.
The PE4124 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Figure 1. Functional Diagram
High Linearity Quad MOSFET Mixer
for GSM 800 & Cellular BTS
Features
•
Integrated, single-ended RF & LO
interfaces
•
High linearity: IIP3 > +32 dBm,
820 - 920 MHz (+17 dBm LO)
•
Low conversion loss: 6.9 dB
(+17 dBm LO)
•
High isolation: typical LO-IF at 43 dB,
LO-RF at 31 dB
•
Designed for low-side LO injection
Figure 2. Package Type
8-lead TSSOP
LO
RF
PE4124
IF
Table 1. AC and DC Electrical Specifications @ +25 °C
(Z
S
= Z
L
= 50
Ω)
Parameter
Frequency Range:
LO
RF
IF
1
Conversion Loss
2
Isolation:
LO-RF
LO-IF
Input IP3
Input 1 dB Compression
Notes:
Minimum
750
820
--
Typical
--
--
70
6.9
Maximum
850
920
--
7.3
Units
MHz
MHz
MHz
dB
29
38
29
31
43
32.5
23
dB
dB
dBm
dBm
1. An IF frequency of 70 MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO frequencies
are within the specified maximum and minimum.
2. Conversion Loss includes loss of IF transformer (M/A COM ETC1-1-13, nominal loss 0.7dB at 70MHz).
*Test conditions unless otherwise noted: LO = 70 MHz, LO input drive = 17 dBm, RF input drive = 3 dBm.
Document No. 70-0043-04
│
www.psemi.com
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 8
PE4124
Product Specification
Figure 3. Pin Configuration (Top View)
LO
GND
RF
1
2
3
8
7
6
5
GND
IF1
IF2
GND
Table 3. Absolute Maximum Ratings
Symbol
T
ST
T
OP
P
LO
P
RF
V
ESD
Parameter/Conditions
Storage temperature range
Operating temperature
range
LO input power
RF input power
ESD Sensitive Device
Min
-65
-40
Max
150
85
20
16
250
Units
°C
°C
dBm
dBm
V
GND
4
PE4124
Table 2. Pin Descriptions
Pin
No.
1
Pin
Name
LO
LO Input
Description
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC Electrical Specifications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
2
GND
Ground connection for Mixer. Traces
should be physically short and connect
immediately to ground plane for best
performance.
RF Input
Ground.
Ground.
IF differential output
IF differential output
Ground.
3
4
5
6
7
8
RF
GND
GND
IF2
IF1
GND
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 8
Document No. 70-0043-04
│
UltraCMOS™ RFIC Solutions
PE4124
Product Specification
Evaluation Kit
Figure 4. Evaluation Board Layout
Peregrine Specification 101/0054
Table 4. Bill of Materials
Reference
T2
U1 (Not Labeled)
R1
J1, J2, J3
Value / Description
M/A Com ETC1-1-13
PE4124 Mixer
0Ω
SMA Connector
Pin1
Applications Support
If you have a problem with your evaluation kit or if
you have applications questions, please contact
applications support:
E-Mail: help@psemi.com (fastest response)
Phone: (858) 731-9400
Figure 5. Evaluation Board Schematic Diagram
LO
LO
GND
GND
T2
IF1
IF2
GND
IF
RF
RF
GND
PE4124
T2 M/A-Com E-Series RF 1:1 Transformer ETC1-1-13
Figure 6. Evaluation Board Testing Block Diagram, 2-Tone Setup
4124
PA
3 dB
Sig
Gen
LO
Eval
Board
IF
3 dB
RF
3 dB
Spectrum
Analyzer
Sig
Gen
6 dB
Hybrid
Tee
6 dB
Sig
Gen
Document No. 70-0043-04
│
www.psemi.com
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 8
PE4124
Product Specification
Typical Performance Plots
(LO=17 dBm, RF=3 dBm, IF=70 MHz)
Figure 7. Conversion Loss vs. Frequency
Figure 8. Input 1dB Compression vs. Frequency
0
30
-2
1dB Comprssion (dBm)
Conversion Loss (dB)
25
20
-4
-40 C
-6
-40 C
25 C 85 C
15
10
-8
85 C
-10
800
25 C
825
850
875
Frequency (MHz)
900
925
950
5
0
800
825
850
875
Frequency (MHz)
900
925
950
Figure 9. Input IP3 vs. Frequency
Figure 10. Output IP3 vs. Frequency
40
30
25
30
-40 C
IIP3 (dBm)
25 C
20
OIP3 (dBm)
85 C
-40 C
25 C
85 C
15
20
10
10
5
0
800
825
850
875
Frequency (MHz)
900
925
950
0
800
825
850
875
Frequency (MHz)
900
925
950
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 8
Document No. 70-0043-04
│
UltraCMOS™ RFIC Solutions
PE4124
Product Specification
Typical Performance Plots
(LO=17 dBm, RF=3 dBm, IF=70 MHz)
Figure 11. LO-RF Isolation vs. Frequency
Figure 12. LO-IF Isolation vs. Frequency
0
-5
0
-10
-10
-15
-20
-25
-30
-35
85 C
-40
800
825
850
875
Frequency (MHz)
900
925
950
-60
800
825
850
875
Frequency (MHz)
900
925
950
-50
-20
Isolation (dB)
-40 C
25 C
85 C
Isolation (dB)
-40 C 25 C
-30
-40
Figure 13. LO Port Return Loss vs. Frequency
Figure 14. RF Port Return Loss vs. Frequency
0
0
-2
-5
Return Loss (dB)
Return Loss (dB)
-4
-10
-6
-15
-8
85 C
-10
25 C
-40 C
-12
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-20
85 C
-25
25 C
-40 C
-30
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Frequency (GHz)
Frequency (GHz)
Document No. 70-0043-04
│
www.psemi.com
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 8
京公网安备 11010802033920号
EEWORLD
