ZXTD3M832
MPPS
TM
Miniature Package Power Solutions
DUAL 40V PNP LOW SATURATION TRANSISTOR
SUMMARY
PNP
V
CEO
= -40V; R
SAT
= 104m ; I
C
= -3A
DESCRIPTION
Packaged in the new
innovative 3mm x 2mm MLP (Micro Leaded
Package)
outline, these new 4
th
generation low saturation dual PNP transistors offer
extremely low on state losses making them ideal for use in DC-DC circuits and
various driving and power management functions.
Additionally users gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
MLP832
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
(-220mV max @1A)
•
h
FE
specified up to -3A
•
I
C
= -3A Continuous Collector Current
•
3mm x 2mm MLP
APPLICATIONS
•
•
•
•
•
DC - DC Converters
Charging circuits
Power switches
Motor control
CCFL Backlighting
ORDERING INFORMATION
DEVICE
ZXTD3M832TA
ZXTD3M832TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
DEVICE MARKING
•
D33
Underside view
ISSUE 1 - JUNE 2003
1
SEMICONDUCTORS
ZXTD3M832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
(a) (f)
Base Current
Power Dissipation at TA=25°C
Linear Derating Factor
(a)(f)
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
P
D
P
D
P
D
T
j
:T
stg
T
j
LIMIT
-50
-40
-7.5
-4
-3
-1000
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
-55 to +150
150
UNIT
V
V
V
A
A
mA
W
mW/ C
W
mW/ C
W
mW/ C
W
mW/ C
W
mW/ C
W
mW/ C
C
C
Power Dissipation at TA=25°C
(b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C
(e)(g)
Linear Derating Factor
Operating & Storage Temperature Range
Junction Temperature
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)(f)
Junction to Ambient
(b)(f)
Junction to Ambient
(b)(f)
Junction to Ambient
Junction to Ambient
(d)(f)
(d)(g)
SYMBOL
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
VALUE
83.3
51
125
111
73.5
41.7
UNIT
C/W
C/W
C/W
C/W
C/W
C/W
Junction to Ambient
(e)(g)
NOTES
(a) For a dual device surface mounted on
8
sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t 5 secs for a dual device surface mounted on
8
sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all
exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual
device.
(c) For a dual device surface mounted on
8
sq cm single sided 2oz copper FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions
with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions
with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight,
1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500mW
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
2
ZXTD3M832
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-25
-150
-195
-210
-260
-0.97
-0.89
300
300
180
60
12
150
480
450
290
130
22
190
19
40
435
2%
25
MIN.
-50
-40
-7.5
TYP.
-80
-70
-8.5
-25
-25
-25
-40
-220
-300
-300
-370
-1.05
-0.95
MAX. UNIT CONDITIONS
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
I
C
=-100 A
I
C
=-10mA*
I
E
=-100 A
V
CB
=-40V
V
EB
=-6V
V
CES
=-32V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.5A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-2.5A, I
B
=-250mA*
I
C
=-2.5A, I
B
=-250mA*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-1.5A, V
CE
=2V*
I
C
=-3A, V
CE
=-2V*
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
pF
ns
ns
V
CB
=-10A, f=1MHz
V
CC
=-15V, I
C
=-0.75A
I
B1
=I
B2
=-15mA
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
4
FPGA/CPLD
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