ZXTN2005Z
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BV
CEO
= 25V : R
SAT
= 25m ; I
C
= 5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 25V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•
Extremely low equivalent on-resistance;
R
SAT
= 25m at 6.5A
•
5.5 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent hFE characteristics up to 20 amps
SOT89
APPLICATIONS
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC modules
•
Backlight Inverters
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
7"
TAPE WIDTH
12mm
embossed
QUANTITY PER
REEL
1,000 units
ZXTN2005ZTA
DEVICE MARKING
869
TOP VIEW
ISSUE 2 - JUNE 2005
1
SEMICONDUCTORS
ZXTN2005Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(a)
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T A =25°C
(b)
Linear derating factor
Operating and storage temperature range
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
P
D
T
j
, T
stg
LIMIT
60
25
7
5.5
20
1.5
12
2.1
16.8
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
LIMIT
83
60
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
2
ZXTN2005Z
CHARACTERISTICS
ISSUE 2 - JUNE 2005
3
SEMICONDUCTORS
ZXTN2005Z
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(SAT)
25
30
45
105
160
Base-emitter saturation voltage
Base-emitter turn on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
h
FE
300
300
200
40
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
950
860
400
450
275
55
150
48
33
464
pF
ns
MIN.
60
60
25
7.0
TYP.
120
120
35
8.1
20
0.5
20
0.5
10
35
45
70
130
200
1050
960
MAX. UNIT CONDITIONS
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
mV
I
C
= 100 A
I
C
= 1 A, RB
I
C
= 10mA*
I
E
= 100 A
V
CB
= 50V
V
CB
= 50V, T
amb
=100 C
V
CB
= 50V
V
CB
= 50V, T
amb
=100 C
V
EB
= 6V
I
C
= 500mA, I
B
= 10mA*
I
C
= 1A, I
B
= 100mA*
I
C
= 1A, I
B
= 10mA*
I
C
= 2A, I
B
= 10mA*
I
C
= 6.5A, I
B
= 150mA*
I
C
= 6.5A, I
B
= 150mA*
I
C
= 6.5A, V
CE
= 1V*
I
C
= 10mA, V
CE
= 1V*
I
C
= 1A, V
CE
= 1V*
I
C
= 7A, V
CE
= 1V*
I
C
= 20A, V
CE
= 1V*
I
C
= 100mA, V
CE
= 10V
f=50MHz
V
CB
= 10V, f= 1MHz*
I
C
= 1A, V
CC
= 10V,
I
B1
= -I
B2
= 100mA
1k
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
4
ZXTN2005Z
TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2005
5
SEMICONDUCTORS
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