ZXTN23015CFH
15V, SOT23, NPN medium power transistor
Summary
V
(BR)CEX
> 60V, V
(BR)CEO
> 15V
I
C(CONT)
= 6A
R
CE(SAT)
= 19m
P
D
= 1.25W
Complementary part number : ZXTP23015CFH
typical
V
CE(SAT)
< 30mV @ 1A
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
•
•
•
•
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
60V forward blocking voltage
Applications
•
•
•
•
DC - DC converters
MOSFET and IGBT gate driving
Motor drive
Relay, lamp, and solenoid drive
E
C
B
Pinout - top view
Tape
width
8mm
Quantity per REEL
3000
Ordering information
Device
ZXTN23015CFHTA
Reel size
(inches)
7
Device marking
327
Issue 1 - February 2006
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ZXTN23015CFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
(c)
Base current
Power dissipation @ T
A
=25
o
C
(a)
Linear derating factor
(a)
Power dissipation @ T
A
=25
o
C
(b)
Linear derating factor
(b)
Power dissipation @ T
A
=25
o
C
(c)
Linear derating factor
(c)
Power dissipation @ T
A
=25
o
C
(d)
Linear derating factor
(d)
Operating and storage temperature
T
j
:T
stg
P
D
P
D
P
D
Symbol
V
CBO
V
(BR)CEX
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
Limit
60
60
15
7.0
12
6
1.2
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
-55 to +150
Unit
V
V
V
V
A
A
A
W
mW/
o
C
W
mW/
o
C
W
mW/
o
C
W
mW/
o
C
o
C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Value
171
119
100
69
Unit
o
o
C/W
C/W
o
C/W
o
C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - February 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTN23015CFH
Characteristics
Issue 1 - February 2006
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3
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ZXTN23015CFH
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Symbol
V
(BR)CBO
V
(BR)CEX
Min.
60
60
Typ.
85
85
Max.
Unit
V
V
Conditions
I
C
=100 A
I
C
=100 A,
R
BE
< 1k
OR
-1V < V
BE
< 0.25V
I
C
=10mA
(*)
I
E
=100 A
V
CE
= 48V,
R
BE
< 1k
OR
-1V < V
BE
< 0.25V
V
CB
=48V
V
EB
=6V
I
C
=10mA, V
CE
=2V
(*)
560
I
C
=500mA, V
CE
=2V
(*)
I
C
=3A, V
CE
=2V
(*)
I
C
=6A, V
CE
=2V
(*)
15
30
90
180
0.93
0.98
0.91
mV
mV
mV
mV
V
V
V
MHz
pF
ns
ns
ns
ns
2%.
Collector-emitter breakdown
V
(BR)CEO
voltage
Emitter-base breakdown voltage V
(BR)EBO
Collector-emitter cut-off current
I
CEX
15
7.0
23
8.3
-
100
V
V
nA
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
I
CBO
I
EBO
H
FE
160
200
190
150
<1
<1
300
350
330
280
7
22
70
130
20
10
nA
nA
Collector-emitter saturation
voltage
V
CE(sat)
I
C
=0.1A, I
B
=5mA
(*)
I
C
=1A, I
B
=100mA
(*)
I
C
=3A, I
B
=60mA
(*)
I
C
=6A, I
B
=120mA
(*)
I
C
=3A, I
B
=60mA
(*)
I
C
=6A, I
B
=120mA
(*)
I
C
=6A, V
CE
=2V
(*)
Ic=500mA, V
CE
=2V,
f=50MHz
V
CB
=10V, f=1MHz
V
CC
=5V, I
C
=3A,
I
B1
=I
B2
=150mA
Base-emitter saturation voltage
V
BE(sat)
0.83
0.89
Base-emitter turn-on voltage
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
V
BE(on)
f
T
C
obo
t
(d)
t
(r)
t
(stg)
t
(f)
0.81
235
56
15
38.5
213
19.7
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 S. Duty cycle
Issue 1 - February 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTN23015CFH
Typical characteristics
Issue 1 - February 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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