BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
●
●
●
●
Designed for Complementary Use with the
BD540 Series
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Up to 120 V V
CEO
rating
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD539
BD539A
Collector-base voltage
BD539B
BD539C
BD539D
BD539
BD539A
Collector-emitter voltage (see Note 1)
BD539B
BD539C
BD539D
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
40
60
80
100
120
40
60
80
100
120
5
5
45
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
BD539
V
(BR)CEO
Collector-emitter
breakdown voltage
BD539A
I
C
= 30 mA
(see Note 4)
V
CE
= 40 V
I
CES
Collector-emitter
cut-off current
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
V
CE
= 120 V
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 30 V
V
CE
= 60 V
V
CE
= 90 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
5V
4V
4V
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 0.5 A
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
1A
3A
1A
3A
5A
3A
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
(see Notes 4 and 5)
(see Notes 4 and 5)
40
30
12
0.25
0.8
1.5
1.25
V
V
I
B
= 0
BD539B
BD539C
BD539D
BD539
BD539A
BD539B
BD539C
BD539D
BD539/539A
BD539B/539C
BD539D
MIN
40
60
80
100
120
0.2
0.2
0.2
0.2
0.2
0.3
0.3
0.3
1
mA
mA
mA
V
TYP
MAX
UNIT
I
EBO
h
FE
I
B
= 125 mA
I
B
= 375 mA
I
B
=
V
CE
=
1A
4V
V
CE(sat)
V
BE(on)
h
fe
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.5 A
I
C
= 0.5 A
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.78
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 1 A
V
BE(off)
= -4.3 V
I
B(on)
= 0.1 A
R
L
= 30
Ω
†
MIN
I
B(off)
= -0.1 A
t
p
= 20 µs, dc
≤
2%
TYP
0.5
2
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
TCS631AH
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
TCS631AB
T
C
= 25°C
T
C
= 80°C
h
FE
- DC Current Gain
1·0
100
0·1
I
C
=
I
C
=
I
C
=
I
C
=
0·01
0·1
100 mA
300 mA
1A
3A
1·0
10
100
1000
10
0·01
0·1
1·0
10
I
C
- Collector Current - A
I
B
- Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·0
V
CE
= 4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
0·9
TCS631AC
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
I
C
- Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAS631AI
I
C
- Collector Current - A
1·0
0·1
BD539
BD539A
BD539B
BD539C
BD539D
10
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
50
P
tot
- Maximum Power Dissipation - W
TIS631AC
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
京公网安备 11010802033920号
EEWORLD
