BD442 datasheet, PDF - EEWORLD Datasheet

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BD442: DescriptionPOWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size65KB，3 Pages; ManufacturerTransys Electronics Limited; Websitehttp://www.transyselectronics.com

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BD442 Overview

POWER TRANSISTOR

BD442 Parametric

Parameter Name	Attribute value
Maker	Transys Electronics Limited
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	4 A
Configuration	Single
Minimum DC current gain (hFE)	40
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	36 W
surface mount	NO
Nominal transition frequency (fT)	7 MHz

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Transys

Electronics

L I M I T E D

EPITAXIAL SILICON POWER TRANSISTORS

BD433

BD435

BD437

BD439

BD441

NPN

BD434

BD436

BD438

BD440

BD442

PNP

EC

B

TO126

Plastic Package

Intended for use in Medium Power Linear and Switching Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Base Current

Total Dissipation @ T

C=

25ºC

Total Dissipation @ T

a=

25ºC

Derate above 25ºC

Operating and Storage

Junction Temperature Range

THERMAL RESISTANCE

Junction to Case

Junction to Ambient in free air

R

th (j-c)

R

th (j-a)

3.5

100

ºC/W

V

CBO

V

CES

V

CEO

V

EBO

I

C

I

B

P

D

P

D

BD433

BD434

22

BD435

BD436

32

BD437

BD438

45

5.0

4.0

7.0

1.0

36.0

1.25

10

- 65 to 150

BD439

BD440

60

BD441

BD442

80

UNIT

V

A

W

mW/ ºC

ºC

Collector Peak Current (t=10ms_

I

CM

T

j

, T

stg

ELECTRICAL CHARACTERISTICS (T

a

=25ºC unless specified otherwise)

TEST CONDITION

DESCRIPTION

SYMBOL

BD433 BD435 BD437 BD439 BD441

BD434 BD436 BD438 BD440 BD442

V

CB

=Rated V

CBO,

I

E

=0

I

CBO

Collector Cut off Current

<100 <100 <100

<100

Collector Cut off Current

Emitter Cut off Current

Collector Emitter Sustaining

Voltage

Collector Emitter Saturation

Voltage

Base Emitter On Voltage

I

CES

I

EBO

*V

CEO (sus)

*V

CE (sat)

V

BE

=0, V

CE

=Rated V

CES

V

EB

=5V

,

I

C

=0

I

C

=100mA, I

B

=0

I

C

=2.0A, I

B

=0.2A

<100

<1.0

>22

<0.5

<100

<1.0

>32

<0.5

<100

<1.0

>45

<0.6

typ 0.58

<1.1

<1.2

<1.5

<100

<1.0

>60

<0.8

<100

<1.0

>80

<0.8

UNIT

µA

mA

V

*V

BE (on)

I

C

=10mA, V

CE

=5V

ALL

I

C

=2.0A, V

CE

=1V

BD442 Related Products

	BD442	BD435	BD439	BD441	BD440	BD438	BD436	BD434
Description	POWER TRANSISTOR	4 A, 32 V, NPN, Si, POWER TRANSISTOR, TO-225AA	4 A, 32 V, NPN, Si, POWER TRANSISTOR, TO-225AA	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126	POWER TRANSISTOR	RF POWER TRANSISTOR	4 A, 32 V, NPN, Si, POWER TRANSISTOR, TO-225AA
Maker	Transys Electronics Limited	Transys Electronics Limited	Transys Electronics Limited	Transys Electronics Limited	Transys Electronics Limited	Transys Electronics Limited	Transys Electronics Limited	Transys Electronics Limited
Reach Compliance Code	unknow	unknow	unknown	unknow	unknow	unknown	unknow	unknow
Maximum collector current (IC)	4 A	4 A	4 A	-	-	4 A	4 A	-
Configuration	Single	Single	Single	-	-	Single	Single	-
Minimum DC current gain (hFE)	40	85	40	-	-	85	85	-
Maximum operating temperature	150 °C	150 °C	150 °C	-	-	150 °C	150 °C	-
Polarity/channel type	PNP	NPN	NPN	-	-	PNP	PNP	-
Maximum power dissipation(Abs)	36 W	36 W	36 W	-	-	36 W	36 W	-
surface mount	NO	NO	NO	-	-	NO	NO	-
Nominal transition frequency (fT)	7 MHz	7 MHz	7 MHz	-	-	7 MHz	700 MHz	-

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