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The 2SD2230 is an element realizing ultra low V
CE(sat)
. This
transistor is ideal for muting such as stereo recorders, VCRs,
and TVs.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Low V
CE(sat)
:
V
CE(sat)1
= 33 mV TYP. @I
C
= 100 mA, I
B
= 10 mA
V
CE(sat)2
= 150 mV TYP. @I
C
= 500 mA, I
B
= 20 mA
• High h
FE
and high current
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
D(DC)
P
T
T
j
T
stg
Ratings
16
16
5
500
200
150
−55
to +150
Unit
V
V
V
mA
mW
°C
°C
Electrode connection
1. Emitter (E)
2. Base (B)
3. Collector (C)
Marking: D46
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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©
2002
1998
2SD2230
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Collector saturation voltage
Output capacitance
Gain bandwidth product
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
*
V
BE
*
V
CE(sat)1
V
CE(sat)2
C
ob
f
T
Conditions
V
CB
= 16 V, I
E
= 0
V
EB
= 6.0 V, I
C
= 0
V
CE
= 1.0 V, I
C
= 100 mA
V
CE
= 1.0 V, I
C
= 500 mA
V
CE
= 1.0 V, I
C
= 10 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 1.0 V, I
E
=
−100
mA
50
200
200
550
33
150
700
50
200
15
MIN.
TYP.
MAX.
100
100
Unit
nA
nA
−
−
mV
mV
mV
pF
MHz
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
2
Data Sheet D16153EJ1V0DS
2SD2230
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC sales representative.
Surface Mounting Type
For details of the recommended soldering conditions, refer to the document
Semiconductor Device Mounting
Technology Manual
(C10535E).
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
IR30-00
Infrared reflow
Package peak temperature: 230°C, Time: 30 sec. max. (at 210°C or higher),
Count: Once, Exposure limit: None*
VPS
Package peak temperature: 215°C, Time: 40 sec. max. (at 200°C or higher),
Count: Once, Exposure limit: None*
VP15-00
Partial heating
Pin temperature: 300°C max., Time: 10 sec. max. Exposure limit: None*
O
* After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
4
Data Sheet D16153EJ1V0DS
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