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42672-90

Description
SP7T UltraCMOS⑩ 2.75 V Switch 100 - 3000 MHz, +68 dBM IIP3
CategoryWireless rf/communication    Radio frequency and microwave   
File Size166KB,4 Pages
ManufacturerpSemi (peregrine semiconductor)
Websitehttp://www.psemi.com/
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42672-90 Overview

SP7T UltraCMOS⑩ 2.75 V Switch 100 - 3000 MHz, +68 dBM IIP3

42672-90 Parametric

Parameter NameAttribute value
MakerpSemi (peregrine semiconductor)
Reach Compliance Codecompli
Base Number Matches1
Advance Information
PE42672 DIE
SP7T UltraCMOS™ 2.75 V Switch
100 – 3000 MHz, +68 dBM IIP3
Figure 1. Functional Diagram
Features
Dedicated TX1 port for WCDMA, TX2
WCDMA
TX1
RX1
GSM/EDGE
TX2
RX2
GSM/EDGE
TX3
RX3
RX4
CMOS
Control/Driver
and ESD
V1
V2
V3
and TX3 ports for GSM/EDGE
Three pin CMOS logic control with
integral decoder/driver
Exceptional harmonic performance:
2f
o
= -84 dBc and 3f
o
= -77 dBc
Low TX insertion loss: 0.50 dB at
900 MHz, 0.70 dB at 1900 MHz
TX – RX Isolation of 44 dB at 900 MHz,
38 dB at 1900 MHz
1500 V HBM ESD tolerance all ports
+68 dBm IIP3
-111 dBm IMD3
No blocking capacitors required
Product Description
Figure 2. Die Top View*
The PE42672 is a HaRP™-enhanced SP7T
RF Switch developed on the UltraCMOS™
process technology. It addresses the specific
design needs of the Quad-Band GSM Handset
Antenna Switch Module Market for use in
GSM/EDGE/PCS/DCS/WCDMA handsets.
The switch is comprised of three TX ports and
four RX ports. TX1 is designed for WCDMA
and TX2 and TX3 are designed for GSM/
EDGE. The four symmetric RX ports can be
used for GSM/EDGE/PCS RX. On-chip CMOS
decoder logic facilitates three-pin low voltage
CMOS control, while high ESD tolerance of
1500 V at all ports, no blocking capacitor
requirements, and on-chip SAW filter over-
voltage protection devices make this the
ultimate in integration and ruggedness.
Peregrine’s HaRP™ technology
enhancements deliver high linearity and
exceptional harmonics performance. It is an
innovative feature of the UltraCMOS™
process, providing performance superior to
GaAs with the economy and integration of
conventional CMOS.
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 4
TX1
ANT
RX1
GND
GND
TX2
1206
µm
RX2
GND
RX3
GND
RX4
GND
GND
TX3
GND
GND V
DD
V3 GN
V2 V1 GND
1006
µm
* Dimensions shown are drawn die size.
Document No. 70-0197-01
www.psemi.com
Contact sales@psemi.com for full version of datasheet

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