RB160L-40
Diodes
Schottky barrier diode
RB160L–40
Applications
High frequency rectification
For switching power supply.
External dimensions
(Units : mm)
1.5±0.2
CATHODE MARK
1.2±0.3
4.5±0.2
Features
1) Compact power mold type (PMDS)
2) Low I
R
. (I
R
=5mA Typ.)
3) High reliability
3
4
0.1
+0.02
−0.1
2.0±0.2
2.6±0.2
Construction
Silicon epitaxial Planar
ROHM : PMDS
EIAJ :
−
JEDEC : SOD-106
,
···· Date of manufacture EX. 1999. 12
→9,
C
Absolute maximum ratings
(Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
∗
Peak forward surge current
Junction temperature
Storage temperature
∗When
mounted on a PCBs board
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
40
40
1
70
125
−40~+125
Unit
V
V
A
A
°C
°C
Electrical characteristics
(Ta = 25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
−
−
Typ.
−
−
Max.
0.55
0.1
Unit
V
mA
I
F
= 1.0A
V
R
= 40V
Conditions
5.0±0.3
RB160L-40
Diodes
Electrical characteristic curves
(Ta = 25°C)
CAPACITANCE BETWEEN TERMINALS : C
T
(F)
10
10m
125
°C
10n
f = 1MHz
FORWARD CURRENT : I
F
(A)
REVERSE CURRENT : I
R
(A)
1m
1
100
°C
75
°C
50
°C
1n
100µ
100m
10µ
25
°C
10m
125
°
C
75
°
C
25
°
C
100p
1µ
1m
0
0.2
0.4
0.6
0.8
1.0
100n
0
10
20
30
40
50
60
10p
0
5
10
15
20
25
30
35
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE : V
R
(V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between
terminals characteristics
1.2
FORWARD POWER DISSIPATION : P
F
(W)
2
POWER DISSIPATION : Pd (W)
1.0
sin 0.5
0.8
0.6
D = 0.05
0.4
0.1
0.3
0.2
0.8 DC
REVERSE RECOVERY TIME : trr (ns)
20
1
I
F
I
O
T
p
0.2
T
0
0
0.4
0.8
1.2
1.6
d=
T
p
T
2.4
10
2.0
0
50
100
150
0
5
10
15
20
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
AMBIENT TEMPERATURE : Ta (°C)
FORWARD CURRENT : I
F
(mA)
Fig. 4 Forward power dissipation
characteristics
Fig. 5 Derating curve
Fig. 6 Reverse recovery time
characteristics
Discrete Device
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