BC856S ... BC859S
BC856S ... BC859S
PNP
Surface Mount General Purpose Si-Epi-Planar Double-Transistors
Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage
Power dissipation
Verlustleistung
1.25
±0.1
PNP
300 mW
SOT-363
0.01 g
Version 2006-08-01
2
6
±0.1
2 x 0.65
5
4
0.9
±0.1
2.1
Type
Code
1
2
3
±0.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
2.4
Dimensions - Maße [mm]
6 = C1
5 = B2
4 = E2
1 = E1
2 = B1
3 = C2
Maximum ratings (T
A
= 25°C)
per transistor – pro Transistor
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E open
C open
- V
CBO
- V
CEO
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
I
EM
T
j
T
S
Grenzwerte (T
A
= 25°C)
BC856S
65 V
80 V
BC857S
45 V
50 V
5V
300 mW
1
)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
BC858S
BC859S
30 V
30 V
Characteristics (T
j
= 25°C)
per transistor – pro Transistor
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE
= 5 V, - I
C
= 10 µA
- V
CE
= 5 V, - I
C
= 2 mA
h-Parameters at/bei - V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain – Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverser voltage transfer ratio – Spannungsrückwirkung
h
fe
h
ie
h
oe
h
re
–
1.6 kΩ
18 µS
–
h
FE
h
FE
–
110
Min.
Kennwerte (T
j
= 25°C)
Typ.
90 ... 270
–
220 ... 600
–
–
1.5 ... 3*10
-4
Max.
–
800
–
15 kΩ
110 µS
–
1
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
1
BC856S ... BC859S
Characteristics (T
j
= 25°C)
per transistor – pro Transistor
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 30 V, (E open)
- V
CE
= 30 V, T
j
= 125°C, (E open)
Emitter-Base cutoff current
- V
EB
= 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB
= 0.5 V,
I
C
= i
c
= 0,
f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Pinning – Anschlussbelegung
T1: E1 = 1, C1 = 6, B1 = 2
T2: E2 = 4, C2 = 3, B2 = 5
1
T1
Kennwerte (T
j
= 25°C)
Min.
- V
CEsat
- V
CEsat
- V
BEsat
- V
BEsat
- V
BE
- V
BE
- I
CB0
- I
CB0
- I
EB0
f
T
C
CBO
C
EB0
R
thA
–
–
–
–
600 mV
–
–
–
–
100 MHz
–
–
Typ.
90 mV
200 mV
700 mV
900 mV
650 mV
–
–
–
–
–
–
10 pF
< 420 K/W
1
)
BC846S ... BC849S
6
5
4
T2
Max.
250 mV
600 mV
–
–
750 mV
820 mV
15 nA
5 µA
100 nA
–
6 pF
–
2
3
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
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