UNISONIC TECHNOLOGIES CO., LTD
BC856/BC857/BC858
SWITCHING AND AMPLIFIER
APPLICATIONS
PNP SILICON TRANSISTOR
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits
*Complement to BC846/BC847/BC848
*Pb-free plating product number:
BC856L/BC857L/BC858L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BC856-x-AE3-R
BC856L-x-AE3-R
BC857-x-AE3-R
BC857L-x-AE3-R
BC858-x-AE3-R
BC858L-x-AE3-R
Note: x: Rank
Package
SOT-23
SOT-23
SOT-23
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
BC856
BC857
BC858
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PARAMETER
SYMBOL
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
RATINGS
UNIT
BC856
-80
V
Collector-Base Voltage
V
CBO
BC857
-50
V
BC858
-30
V
BC856
-65
V
Collector-Emitter Voltage
V
CEO
BC857
-45
V
BC858
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Dissipation
P
D
310
mW
Collector Current (DC)
I
C
-100
mA
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
I
CBO
V
CB
=-30V, I
E
=0
h
FE
V
CE
=-5V, I
C
=-2mA
I
C
=-10mA,I
B
=-0.5mA
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
=-100mA,I
B
=-5mA
I
C
=-10mA,I
B
=-0.5mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=-100mA,I
B
=-5mA
V
CE
=-5V,I
C
=-2mA
Base-Emitter On Voltage
V
BE(ON)
V
CE
=-5V,I
C
=-10mA
Current Gain Bandwidth Product
f
T
V
CE
=-5V,I
C
=-10mA, f=100MHz
Output Capacitance
Cob
V
CB
=-10V,I
E
=0,f=1MHz
Noise Figure
NF
V
CE
=-5V, I
C
=-200μA, f=1KHz, R
G
=2KΩ
PARAMETER
Collector Cut-Off Current
DC Current Gain
MIN
110
TYP MAX UNIT
-15
nA
800
-90 -300 mV
-250
-700
-900
-660
150
2
mV
mV
mV
-750 mV
-800 mV
MHz
6
pF
10
dB
-650
-600
CLASSIFICATION OF h
FE
RANK
RANGE
A
110-220
B
200-450
C
420-800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
Collector Current, I
OUT
(mA)
Saturation Voltage, V
BE(SAT).
V
EC(SAT)
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, I
C
(mA)
DC Current Gain, h
FE
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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