General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current(Peak value)
Emitter Current(Peak value)
Base Current(Peak value)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
EM
I
BM
BC846
65
80
6.0
100
200
200
200
BC847
BC850
45
50
6.0
100
200
200
200
BC848
BC849
30
30
5.0
100
200
200
200
Unit
V
V
V
mAdc
mAdc
mAdc
mAdc
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
BC850BLT1,CLT1
3
1
2
SOLDERING CHARACTERISTICS
Characteristic
Solder Heat Resistance
Solderability
Symbol
265
240 to 265
Symbol
P
D
225
1.8
R
θ
JA
P
D
556
300
R
θ
JA
T
J
, T
stg
2.4
417
–55 to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
°C
°C
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Max
Unit
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
Collector Cutoff Current
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
5.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
v
V
(BR)CES
v
V
(BR)CBO
v
BC848A,B,C, BC849B,C,
BC850B,C
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
V
(BR)EBO
I
CBO
—
—
15
5.0
nA
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M3–1/4
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base–Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
DC Current Gain
(I
C
= 10
µA,
V
CE
= 5.0 V)
h
FE
—
—
—
110
200
420
—
—
—
—
580
—
90
150
270
180
290
520
—
—
0.7
0.9
660
—
—
—
—
220
450
800
0.25
0.6
—
—
700
770
—
V
V
V
CE(sat)
V
V
mV
BE(sat)
BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA, BC846A, BC847A, BC848A
V
CE
= 5.0 V
dc
, R
S
= 2.0 kΩ,BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C
BC849B,C, BC850B,C
f
T
C
obo
NF
—
—
—
—
10
4.0
100
—
—
—
—
4.5
MHz
pF
dB
h
FE
, NORMALIZED DC CURRENT GAIN
2.0
1.5
1.0
V, VOLTAGE (VOLTS)
V
CE
= 10 V
T
A
= 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= 10 V
1.0
0.8
0.6
0.4
0.3
V
CE(sat)
@ I
C
/I
B
= 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0
2.0
θ
VB
, TEMPERATURE COEFFICIENT (mV/ °C)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
1.0
T
A
= 25°C
1.6
–55°C to +125°C
1.2
I
C
= 200 mA
1.2
1.6
I
C
=
0.8
I
C
=
10 mA 20 mA
I
C
= 50 mA
I
C
= 100 mA
2.0
2.4
0.4
2.8
0
0.02
0.1
1.0
10
20
3.0
0.2
1.0
10
100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
M3–2/4
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
BC847/BC848
10.0
7.0
5.0
C, CAPACITANCE(pF)
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz)
400
300
200
V
CE
= 10V
T
A
= 25°C
T
A
= 25°C
C
ib
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7 1.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
2.0 3.0
5.0 7.0 10
20
30
50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
1.0
V
CE
= 5V
T
A
= 25°C
2.0
V, VOLTAGE (VOLTS)
Figure 6. Current–Gain – Bandwidth Product
h
FE
, DC CURRENT GAIN (NORMALIZED)
T
A
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 5.0 V
0.4
1.0
0.5
0.2
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.1 0.2
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
θ
VB
, TEMPERATURE COEFFICIENT (mV/°C)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
–1.0
2.0
T
A
= 25°C
1.6
20mA
1.2
I
C
=
10 mA
50mA
100mA
200mA
–1.4
–1.8
θ
VB
for V
BE
–55°C to 125°C
0.8
–2.2
0.4
–2.6
0
0.02
0.05 0.1
0.2
0.5
1.0 2.0
5.0
10
20
–3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
M3–3/4
BC846ALT1, BLT1 BC847ALT1, BLT1 CLT1 thru BC850BLT1, CLT1
BC846
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
40
T
A
= 25°C
C, CAPACITANCE (pF)
500
200
100
50
20
20
C
ib
10
6.0
4.0
C
ob
V
CE
= 5 V
T
A
= 25°C
2.0
0.1 0.2
0.5
1.0 2.0
5.0 10 20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
M3–4/4
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