UNISONIC TECHNOLOGIES CO., LTD
BC846-BC850
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
* Suitable for automatic insertion in thick and thin-film
circuits.
* Complement to BC856 … BC860
NPN SILICON TRANSISTOR
3
2
1
SOT-23
3
1
2
SOT-323
*Pb-free plating product number:
BC846L/BC847L/BC848L/BC849L/BC850L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BC846-x-AE3-R
BC846L-x-AE3-R
BC847-x-AE3-R
BC847L-x-AE3-R
BC848-x-AE3-R
BC848L-x-AE3-R
BC849-x-AE3-R
BC849L-x-AE3-R
BC850-x-AE3-R
BC850L-x-AE3-R
BC846-x-AL3-R
BC846L-x-AL3-R
BC847-x-AL3-R
BC847L-x-AL3-R
BC848-x-AL3-R
BC848L-x-AL3-R
BC849-x-AL3-R
BC849L-x-AL3-R
BC850-x-AL3-R
BC850L-x-AL3-R
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
BC846L-x-AE3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323
(3) x: refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
BC846
BC847
BC848
BC849
BC850
8A
8B
8C
8D
8E
: Rank Code,refer to Classification of h
FE
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-027,C
BC846-BC850
PARAMETER
Collector-Base Voltage
BC846
BC847 / BC850
BC848 / BC849
BC846
BC847 / BC850
BC848 / BC849
BC846 / BC847
BC848 / BC849 /
BC850
SYMBOL
V
CBO
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
, unless otherwise specified)
VALUE
80
50
30
65
45
30
6
5
UNIT
V
V
V
V
V
V
V
V
mA
mW
mW
°
C
°
C
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
Collector Current (DC)
V
EBO
Ic
100
SOT-23
310
Collector Dissipation
P
D
SOT-323
200
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
BC846/BC847/BC848
BC849/BC850
Noise Figure
BC849
BC850
SYMBOL
TEST CONDITIONS
I
CBO
V
CB
=30V, I
E
=0
h
FE
V
CE
=5.0V, Ic=2.0mA
Ic=10mA,I
B
=0.5mA
V
CE(SAT)
Ic=100mA,I
B
=5.0mA
Ic=10mA,I
B
=0.5mA
V
BE(SAT)
Ic=100mA,I
B
=5.0mA
V
CE
=5.0V,Ic=2.0mA
V
BE(ON)
V
CE
=5.0V,Ic=10mA
V
CE
=5.0V,Ic=10mA
f
T
f=100MHz
Cob
V
CB
=10V, I
E
=0, f=1.0MHz
Cib
V
EB
=0.5V, I
C
=0, f=1.0MHz
V
CE
=5V, Ic=200
µ
A,
f=1KHz, R
G
=2K
Ω
NF
V
CE
=5V, I
C
=200
µ
A,
R
G
=2K
Ω
, f=30~15000Hz
MIN
110
90
200
700
900
660
TYP
MAX UNIT
15
nA
800
250
mV
600
mV
mV
mV
700
mV
720
mV
MHz
6
10
4
4
3
pF
pF
dB
dB
dB
dB
580
300
3.5
9
2
1.2
1.4
1.4
CLASSIFICATION OF h
FE
RANK
RANGE
A
110-220
B
200-450
C
420-800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-027,C
BC846-BC850
TYPICAL CHARACTERISTICS
Static Characteristic
100
Collector Current , I
C
(mA)
DC Current Gain, h
FE
NPN SILICON TRANSISTOR
DC Current Gain
10000
80
60
40
20
0
0
4
I
B
=400µA
I
B
=350µA
I
B
=300µA
I
B
=250µA
I
B
=200µA
I
B
=150µA
I
B
=100µA
I
B
=50µA
12 16
20
1000
V
CE
=5V
100
8
10
1
10
100
1000
Collector-Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Saturation Voltage, V
BE(SAT)
, V
CE(SAT)
(V)
1000
V
BE(SAT)
Collect current, I
C
(mA)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
I
C
=10I
B
Base-Emitter on Voltage
100
V
CE
=2V
10
100
V
CE(sat)
1
10
1
10
100
1000
0.1
0.1 0.2 0.4
0.6
0.8 1.0
1.2
Collector Current I
C
(mA)
,
Base-Emitter Voltage, V
BE
(V)
Collector Output Capacitance
100
Current Gain Bandwidth Product
1000
Capacitance, C
ob
(pF)
f=1MHz
10
Current Gain-Bandwidth
Product, f
T
(MHz)
V∞=5V
100
1
10
0.1
1
10
100
1000
1
0.1
1
10
100
Collector-Base Voltage, V
CB(
V)
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-027,C
BC846-BC850
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-027,C
Microcontroller MCU
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