Pb
RoHS
COMPLIANCE
BC846A,B
BC847A,B,C
BC848A,B,C
0.2 Watts NPN Plastic-Encapsulate Transistors
SOT-23
Features
Ideally suited for automatic insertion
Epitaxial planar die construction
For switching, AF driver and amplifier
applications
Complementary NPN type available(BC856)
Qualified to AEC-Q101 standards for high
reliability
Mechanical Data
Case: SOT-23, Molded plastic
Case material: molded plastic. UL flammability
classification rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIIL-STD-202,
Method 208
Lead free plating
Marking & Polarity: See diagram
Weight: 0.008 gram (approx.
)
Maximum Ratings
Type Number
Dimensions in inches and (millimeters)
T
A
=25 C unless otherwise specified
o
Symbol
V
CBO
V
CEO
I
CM
P
CM
V
EBO
I
CBO
BC846
80
65
BC847
50
45
0.1
0.2
6
0.1
BC848
30
30
Units
V
V
A
W
V
uA
Collector-base breakdown voltage
I
C
=10uA, I
E
=0
Collector-emitter breakdown voltage I
C
=10mA, I
B
=0
Collector current
o
Power dissipation (Tamb=25 C) (Note 1)
I
E
=10uA, I
C
=0
V
CB
=70V I
E
=0
V
CB
=50V I
E
=0
V
CB
=30V I
E
=0
Collector cut-off current
V
CE
=60V I
B
=0
V
CE
=45V I
B
=0
V
CE
=30V I
B
=0
Emitter cut-off current
V
EB
=5V I
C
=0
Collector-emitter saturation voltage I
C
=100mA, I
B
=5mA
Base-emitter saturation voltage
I
C
=100mA, I
B
=5mA
Base-emitter voltage
V
CE
=5V I
C
=2mA
V
CE
=5V I
C
=10mA
Transition frequency V
CE
=5V I
C
=10mA f=100MHz
Operating and Storage Temperature Range
Emitter-base breakdown voltage
Collector cut-off current
0.1
0.1
0.1
I
CEO
I
EBO
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
0.1
0.1
0.1
0.5
1.1
700
770
100
-55 to + 150
uA
uA
V
V
mV
MHz
o
C
Type Number
DC current gain BC846A,847A,848A
BC846B,847B,848B V
CE
=5V I
C
=2mA
BC847C / BC848C
T
J
, T
STG
Symbol
H
FE(1)
Min
110
200
420
Max
220
450
800
Units
DEVICE MARKING
BC846A=1A, BC846B=1B, BC847A=1E, BC847B=1F, BC847C=1G, BC848A=1J, BC848B=1K, BC848C=1L
Note 1: Transistor mounted on an FR4 Printed-circuit board.
Version: B07
RATINGS AND CHARACTERISTIC CURVES (BC846A, B ; BC847A, B, C ; BC848A, B, C)
FIG.1- NORMALIZED DC CURRENT GAIN
2.0
1.0
FIG.2- "SATURATION" AND "ON" VOLTAGES
1.5
V
CE
= 10V
T
A
= 25 C
O
0.9
0.8
T
A
= 25
O
C
V
BE(sat)
@ I
C
10
/
I
B
=
V
=10
h
FE
, NORMALIZED DC CURRENT GAIN
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
V, VOLTAGE (VOLTS)
0.7
V
BE(on)
@
V
CE
0.6
0.5
0.4
0.3
0.2
0.1
V
CE(sat)
@
I
C
/ I
B
=10
0.2
0
.2
0
.5
1
2
5
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mAdc)
0
0.1
0 0
.2 .3
0
.5
1
2
3
5
10
20 30
50
100
I
C
, COLLECTOR CURRENT (mAdc)
FIG.3- COLLECTOR SATURATION REGION
2.0
1.8
0.8
FIG.4- BASE-EMITTER TEMPERATURE COEFFICIENT
-55
O
C
to +125
O
C
TEMPERATURE COEFFICIENT (mV/ C)
O
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
T
A
= 25
O
C
I
C
=
10
mA
I
C
=
20
mA
I
C
=
50 mA
I
C
=
200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.02
1.2
1.6
I
C
=
100 mA
2.0
2.4
VB
,
2.8
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
3.2
0.2
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
FIG.5- CAPACITANCES
f
T
, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
10
9.0
8.0
7.0
6.0
400
FIG.6- CURRENT-GAIN - BANDWIDTH PRODUCT
T
A
= 25
O
C
300
V
CE
= 10V
T
A
= 25
O
C
200
C, CAPACITANCE (pF)
5.0
4.0
3.0
C
ib
100
80
60
50
40
30
C
ob
2.0
1.0
0.4
0.6 0.8 1.0
2.0
3.0 4.0
6.0 8.0 10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
20
0
.5
0 7 1.0
.
2.0
3.0
5.0
7.0
10
20
30
50
I
C
, COLLECTOR CURRENT (mAdc)
Version:
B07
RATINGS AND CHARACTERISTIC CURVES (BC846A, B ; BC847A, B, C ; BC848A, B, C)
FIG.7- DC CURRENT GAIN
2.0
1.5
1.0
FIG.8- "ON" VOLTAGES
V
CE
= 10V
T
A
= 25 C
O
0.9
0.8
T
A
= 25
O
C
=10
h
FE
, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
BE(sat)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
@
I
C
/ I
B
V
E
V
BE
@
C
= 5.0 V
V
CE(sat)
@
I
C
/ I
B
=10
200
0.1 0
.2
0
.5
1
2
5
10
20
50
100
200
0
I
C
, COLLECTOR CURRENT (mA)
0 0
.2 .3
0
.5
1
2
3
5
10
20 30
50
100
I
C
, COLLECTOR CURRENT (mA)
FIG.9- COLLECTOR SATURATION REGION
2.0
1.8
-1.0
FIG.10- BASE-EMITTER TEMPERATURE COEFFICIENT
-55
O
C
to +125
O
C
TEMPERATURE COEFFICIENT (mV/ C)
O
T
A
= 25
O
C
-1.4
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.02
I
C
=
10
mA
I
C
=
20
mA
I
C
=
50 mA
I
C
=
100 mA
I
C
=
200 mA
-1.8
VB
for V
BE
-2.2
VB
,
-2.6
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
-3.0
0.2
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
FIG.11- CAPACITANCES
40
FIG.12- CURRENT-GAIN - BANDWIDTH PRODUCT
1000
T
A
= 25
O
C
20
f
T
, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
500
400
300
200
T
A
= 25
O
C
C, CAPACITANCE (pF)
C
ib
10
8.0
6.0
100
80
60
50
40
30
20
C
ob
4.0
2.0
0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40 60
100
V
R
, REVERSE VOLTAGE (VOLTS)
10
0 01
.
1.0
2.0
5.0
10
20
50
100
1000
I
C
, COLLECTOR CURRENT (mA)
Version:
B07
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