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SMBJ30A R5

Description
ESD Suppressors / TVS Diodes 600W,30V,5%,UNIDIR, TVS
CategoryCircuit protection   
File Size280KB,8 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SMBJ30A R5 Overview

ESD Suppressors / TVS Diodes 600W,30V,5%,UNIDIR, TVS

SMBJ30A R5 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryESD Suppressors / TVS Diodes
RoHSDetails
PolarityUnidirectional
Number of Channels1 Channel
Termination StyleSMD/SMT
Breakdown Voltage33.3 V
Working Voltage30 V
Clamping Voltage48.4 V
Ipp - Peak Pulse Current13 A
Package / CaseDO-214AA-2
Pd - Power Dissipation600 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Factory Pack Quantity850
Vf - Forward Voltage3.5 V
SMBJ SERIES
Taiwan Semiconductor
600W, 5V - 170V Surface Mount Transient Voltage Suppressor
FEATURES
Low profile package
Ideal for automated placement
Glass passivated junction
Built-in strain relief
Excellent clamping capability
Fast response time: Typically less than 1.0ps
Typical I
R
less than 1μA above 10V
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
(uni - directional)
V
BR
(bi - directional)
P
PPSM
T
J MAX
Package
Configuration
VALUE
2
5 - 170
5 - 170
600
150
UNIT
V
V
V
W
°C
DO-214AA (SMB)
Single Die
APPLICATIONS
● Switching mode power supply (SMPS)
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Part no. with suffix “H” means AEC-Q101 qualified
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
(1)
10/1000us waveform
Steady state power dissipation at
Forward Voltage @ I
F
=50A for Uni-directional only
Junction temperature
(2)
SYMBOL
P
PPSM
P
tot
V
F
T
J
Part Number
600
3
3.5 / 5.0
- 55 to +150
UNIT
W
W
V
°C
°C
Storage temperature
T
STG
- 55 to +150
Notes:
1.
Non-repetitive Current Pulse Per Fig. 3 and derated above T
A
=25°C Per Fig. 2
2.
V
F
=3.5V on SMBJ5.0 - SMBJ90 Devices and V
F
=5.0V on SMBJ100 - SMBJ170 Devices
Devices for Bipolar Applications
1.
For Bidirectional Use C or CA Suffix for Types SMBJ5.0 - Types SMBJ170
2.
Electrical Characteristics Apply in Both Directions
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