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BAV70LT1_07

Description
0.1 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size49KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BAV70LT1_07 Overview

0.1 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB

BAV70LT1_07 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2250 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.1000 A
BAV70LT1
Preferred Device
Dual Switching Diode
Common Cathode
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
70
200
500
Unit
V
mA
mA
http://onsemi.com
3
CATHODE
ANODE
1
2
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
Unit
mW
1
3
SOT−23 (TO−236)
CASE 318
STYLE 9
mW/°C
°C/W
2
MARKING DIAGRAM
mW
mW/°C
°C/W
°C
1
A4
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
A4 M
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BAV70LT1
BAV70LT1G
BAV70LT3
BAV70LT3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
1
January, 2007 − Rev. 4
Publication Order Number:
BAV70LT1/D

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