EEWORLDEEWORLDEEWORLD

Part Number

Search

BAT54CDW

Description
0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size82KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Compare View All

BAT54CDW Overview

0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE

Lead-free
BAT54TW /ADW /CDW /SDW
/BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
SOT-363
A
NEW PRODUCT
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and
ESD Protection
Lead Free/RoHS Compliant (Note 3)
G
H
K
M
TOP VIEW
B C
Dim
A
B
C
D
F
H
J
K
L
M
a
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Please See Ordering Information, Note 5, on
Page 2
Orientation: See Diagrams Below
Weight: 0.006 grams (approx.)
Marking: See Diagrams Below & Page 2
A
1
0.65 Nominal
J
D
F
L
All Dimensions in mm
C
2
C
2
C
1
A
2
A
2
AC
1
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
BAT54ADW*
BAT54CDW*
Marking: KL6
Marking: KL7
*Symmetrical configuration, no orientation indicator.
BAT54SDW*
Marking: KL8
BAT54BRW
Marking: KLB
BAT54TW
Marking: KLA
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0s
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
P
d
R
qJA
T
j
, T
STG
Value
30
200
300
600
200
625
-65 to +125
Unit
V
mA
mA
mA
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
Min
30
¾
¾
¾
¾
Typ
¾
¾
¾
¾
¾
Max
¾
240
320
400
500
1000
2.0
10
5.0
Unit
V
Test Condition
I
R
= 100mA
I
F
= 0.1mA
I
F
=
1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 25V
V
R
= 1.0V, f = 1.0MHz
I
F
= 10mA through I
R
= 10mA
to I
R
= 1.0mA, R
L
= 100W
Forward Voltage (Note 2)
V
F
I
R
C
T
t
rr
mV
Reverse Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
mA
pF
ns
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be
found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heatin
g effect.
3. No purposefully added lead.
DS30152 Rev. 11 - 2
1 of 3
www.diodes.com
BAT54TW /ADW /CDW /SDW /BRW
ã
Diodes Incorporated

BAT54CDW Related Products

BAT54CDW BAT54TW_1 BAT54TW BAT54SDW BAT54BRW BAT54ADW
Description 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 3 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, 4 ELEMENT, SILICON, SIGNAL DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2892  1193  2729  349  1164  59  25  55  8  24 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号