AP75T10S/P
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
100V
15mΩ
72A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP75T10P) are available for low-profile applications.
G
D
G D
S
TO-263(S)
TO-220(P)
S
Units
V
V
A
A
A
W
W/℃
℃
℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
±20
72
45
260
138
1.11
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.9
62
Units
℃/W
℃/W
AP75T10S/P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=16A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=100V, V
GS
=0V
V
DS
=80V ,V
GS
=0V
V
GS
= ±20V
I
D
=30A
V
DS
=80V
V
GS
=4.5V
V
DS
=50V
I
D
=30A
R
G
=10Ω,V
GS
=10V
R
D
=1.6Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=30A, V
GS
=0V
dI/dt=100A/µs
Min.
100
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
0.09
-
-
-
52
-
-
-
69
12
39
12
75
220
250
5690
540
605
1.1
Typ.
-
51
74
Max. Units
-
-
15
21
3
-
10
100
±100
110.4
-
-
-
-
-
-
9100
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Source-Drain Diode
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP75T10S/P
250
120
T
C
= 25 C
200
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
6.0 V
5.0V
4.5V
100
T
C
= 150
o
C
80
10V
6.0V
5.0V
4.5V
V
G
=3.0V
150
60
100
V
G
=3.0V
50
40
20
0
0
2
4
6
8
0
0
1
2
3
4
5
6
7
8
9
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
17
2.0
I
D
=16A
16
1.8
T
C
=25 C
1.6
o
I
D
=30A
V
G
=10V
R
DS(ON)
(m
Ω
)
15
Normalized R
DS(ON)
1.4
14
1.2
1.0
13
0.8
12
0.6
11
3
5
7
9
11
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
45
1.5
30
Normalized V
GS(th)
(V)
I
S
(A)
T
j
=150
o
C
15
1
T
j
=25 C
o
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP75T10S/P
f=1.0MHz
12
10000
V
GS
, Gate to Source Voltage (V)
I
D
= 30 A
10
C
iss
8
V
DS
= 50 V
V
DS
= 64 V
V
DS
= 80 V
C (pF)
1000
6
4
C
oss
C
rss
2
0
0
20
40
60
80
100
120
140
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
0.1
1ms
10
0.1
0.05
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
10ms
T
c
=25 C
Single Pulse
1
o
100ms
DC
10
100
1000
Single Pulse
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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