AP9916H/J
Advanced Power
Electronics Corp.
▼
Low on-resistance
▼
Capable of 2.5V gate drive
▼
Low drive current
▼
Single Drive Requirement
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
18V
25mΩ
35A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=125℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
18
± 12
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.5
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200227032
AP9916H/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
18
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
18
-
-
-
17.5
1.2
7.9
7.3
98
25.6
98
527
258
112
Max. Units
-
-
25
40
1
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=18V, V
GS
=0V
V
DS
=18V ,V
GS
=0V
V
GS
= ± 12V
I
D
=18A
V
DS
=18V
V
GS
=5V
V
DS
=10V
I
D
=18A
R
G
=3.3Ω,V
GS
=5V
R
D
=0.56Ω
V
GS
=0V
V
DS
=18V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.3V
T
j
=25℃, I
S
=35A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
35
90
1.3
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9916H/J
100
80
T
C
=25
o
C
V
G
=4.5V
80
70
T
C
=150
o
C
V
G
=4.5V
60
I
D
, Drain Current (A)
I
D
, Drain Current (A)
V
G
=3.5V
60
V
G
=3.5V
50
40
40
V
G
=2.5V
V
G
=2.5V
30
20
20
10
V
G
=1.5V
V
G
=1.5V
0
0
1
2
3
4
5
6
7
0
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.8
I
D
= 6 A
28
I
D
=6A
1.6
T
C
=25
o
C
V
G
=4.5V
26
Normalized R
DS(ON)
1.4
R
DS(ON)
(m
Ω
)
24
1.2
22
1.0
20
0.8
18
1
2
3
0.6
V
GS
(V)
4
5
6
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP9916H/J
40
60
35
50
30
I
D
, Drain Current (A)
40
25
20
P
D
(W)
25
50
75
100
125
150
30
15
20
10
10
5
0
0
0
T
c
, Case Temperature (
o
C)
T
c
, Case Temperature (
o
C)
50
100
150
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
100
10us
Normalized Thermal Response (R
thjc
)
DUTY=0.5
0.2
I
D
(A)
10
100us
1ms
10ms
100ms
0.1
0.1
0.05
0.02
SINGLE PULSE
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
T
c
=25
o
C
Single Pulse
0.1
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9916H/J
16
1000
f=1.0MHz
14
I
D
=18A
V
DS
=10V
V
DS
=15V
V
DS
=18V
Ciss
V
GS
, Gate to Source Voltage (V)
12
Coss
10
8
C (pF)
100
Crss
6
4
2
0
0
5
10
15
20
25
30
35
40
45
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
1.2
10
0.95
T
j
=150
o
C
1
V
GS(th)
(V)
1.2
1.6
T
j
=25
o
C
I
S
(A)
0.7
0.1
0.45
0.01
0
0.4
0.8
0.2
-50
V
SD
(V)
T
j
, Junction Temperature (
o
C )
0
50
100
150
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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