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UPD44164185AF5-E40Y-EQ2

Description
IC,SYNC SRAM,DDR,1MX18,CMOS,BGA,165PIN,PLASTIC
Categorystorage    storage   
File Size383KB,40 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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UPD44164185AF5-E40Y-EQ2 Overview

IC,SYNC SRAM,DDR,1MX18,CMOS,BGA,165PIN,PLASTIC

UPD44164185AF5-E40Y-EQ2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBGA
Contacts165
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Maximum clock frequency (fCLK)250 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
memory density18874368 bi
Memory IC TypeSTANDARD SRAM
memory width18
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum standby current0.3 A
Minimum standby current1.7 V
Maximum slew rate0.51 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Base Number Matches1
DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD44164085A, 44164095A, 44164185A, 44164365A
18M-BIT DDRII SRAM SEPARATE I/O
2-WORD BURST OPERATION
Description
The
μ
PD44164085A is a 2,097,152-word by 8-bit, the
μ
PD44164095A is a 2,097,152-word by 9-bit, the
μ
PD44164185A
is a 1,048,576-word by 18-bit and the
μ
PD44164365A is a 524,288-word by 36-bit synchronous double data rate static
RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44164085A,
μ
PD44164095A,
μ
PD44164185A and
μ
PD44164365A integrate unique synchronous peripheral
circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive
edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA package (13 x 15)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports
DDR read or write operation initiated each cycle
Pipelined double data rate operation
Separate data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.
User programmable impedance output
<R>
Fast clock cycle time : 3.3 ns (300 MHz), 3.7 ns (270 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
<R>
Operating ambient temperature: Commercial T
A
= 0 to +70°C
Industrial
T
A
= –40 to +85°C
(-E33, -E37, -E40, -E50)
(-E37Y, -E40Y, -E50Y)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M17769EJ3V0DS00 (3rd edition)
Date Published February 2007 NS CP(N)
Printed in Japan
The mark <R> shows major revised points.
2006
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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