B500C3700-2200 datasheet, PDF - EEWORLD Datasheet

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B500C3700-2200: Description2.7 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size164KB，2 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com; Environmental Compliance

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B500C3700-2200 Overview

2.7 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE

B500C3700-2200 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SEMIKRON
package instruction	R-PSIP-W4
Contacts	4
Reach Compliance Code	unknow
Is Samacsys	N
Other features	UL RECOGNIZED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSIP-W4
JESD-609 code	e2
Maximum non-repetitive peak forward current	150 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	2.7 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal surface	Tin/Silver (Sn/Ag)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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B ...C3700-2200

Inline bridge

Silicon-Bridge Rectifiers

B ...C3700-2200

Forward Current: 3,7 / 2,2 A

Reverse Voltage: 80 to 1000 V

Absolute Maximum Ratings

Symbol Conditions

Values

Units

Publish Data

Features

Mechanical Data

Characteristics

Symbol Conditions

Values

Units

Dimensions in mm

10-04-2006 SCT

B500C3700-2200 Related Products

	B500C3700-2200	B40C3700-2200_06	B40C3700-2200	B80C3700-2200	B380C3700-2200	B250C3700-2200
Description	2.7 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE	2.7 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE	2.7 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE	2.7 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE	2.7 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE	2.7 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE
Diode component materials	SILICON	silicon	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	bridge rectifier diode	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A	150 A
Number of components	4	4	4	4	4	4
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum repetitive peak reverse voltage	1000 V	160 V	80 V	160 V	800 V	600 V
Terminal form	WIRE	Wire	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	single	SINGLE	SINGLE	SINGLE	SINGLE
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to
Maker	SEMIKRON	-	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON
package instruction	R-PSIP-W4	-	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4
Contacts	4	-	4	4	4	4
Reach Compliance Code	unknow	-	compli	compli	compli	compli
Other features	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
JESD-30 code	R-PSIP-W4	-	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4
JESD-609 code	e2	-	e2	e2	e2	e2
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
Maximum output current	2.7 A	-	2.7 A	2.7 A	2.7 A	2.7 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO	NO	NO
Terminal surface	Tin/Silver (Sn/Ag)	-	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Is it lead-free?	-	-	Lead free	Lead free	Lead free	Lead free
Minimum operating temperature	-	-	-50 °C	-50 °C	-50 °C	-50 °C

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