MBR3035PT thru MBR30200PT
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Dual Common Cathode Schottky Rectifier
TO-247AD (TO-3P)
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
10 in-lbs maximum
Weight:
6.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
MBR
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge Current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=15A, T
J
=25℃
I
F
=15A, T
J
=125℃
I
F
=30A, T
J
=25℃
I
F
=30A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change,(Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
T
J
=25
℃
T
J
=125
℃
SYMBOL 3035
PT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
2
-
V
F
0.60
0.82
0.73
I
R
dV/dt
R
θJC
T
J
T
STG
1
20
15
10,000
1.4
- 55 to +150
- 55 to +150
0.75
0.65
-
-
35
24
35
MBR
3045
PT
45
31
45
MBR
3050
PT
50
35
50
MBR
3060
PT
60
42
60
30
30
200
1
0.85
0.75
-
-
0.5
10
0.95
0.92
1.02
0.98
1.05
-
1.10
-
0.1
mA
V/μs
O
MBR
PT
90
63
90
MBR
PT
100
70
100
MBR
PT
150
105
150
MBR
UNIT
V
V
V
A
A
A
A
PT
200
140
200
3090 30100 30150 30200
V
C/W
O
O
C
C
Document Number: DS_D1309029
Version: J13
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR30xxPT
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE
C0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
TO-3P
PACKING
30 / Tube
Note 1: "xx" defines voltage from 35V (MBR3035PT) to 200V (MBR30200PT)
EXAMPLE
PREFERRED P/N
MBR3060PT C0
MBR3060PT C0G
MBR3060PTHC0
PART NO.
MBR3060PT
MBR3060PT
MBR3060PT
H
AEC-Q101
QUALIFIED
PACKING CODE
C0
C0
C0
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
35
AVERAGE FORWARD
A
CURRENT (A)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
225
200
175
150
125
100
75
50
25
0
1
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
CASE TEMPERATURE (℃)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
REVERSE LEAKAGE CURRENT (mA)
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125℃
10
FORWARD CURRENT (A)
10
TJ=125℃
TJ=25℃
1
1
0.1
TJ=25℃
0.01
MBR3035PT-3045PT
MBR3050PT-30200PT
0
20
40
60
80
100
120
140
0.1
MBR3035PT-45PT
MBR3050PT-60PT
MBR3090PT-200PT
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
1.1 1.2
0.01
0.001
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1309029
Version: J13
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
TRANSIENT THERMAL IMPEDANCE(℃/W)
f=1.0MHz
Vsig=50mVp-p
MBR3035PT-MBR3045PT
100
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
10000
JUNCTION CAPACITANCE (pF)
A
10
1000
MBR3050PT-MBR3060PT
1
MBR3090PT-MBR30200PT
100
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
15.90
7.90
5.70
20.80
3.50
19.70
-
2.90
1.93
2.97
1.12
5.20
4.90
2.70
0.51
Max
16.40
8.20
6.20
21.30
4.10
20.20
4.30
3.40
2.18
3.22
1.22
5.70
5.16
3.00
0.76
Unit (inch)
Min
0.626
0.311
0.224
0.819
0.138
0.776
-
0.114
0.076
0.117
0.044
0.205
0.193
0.106
0.020
Max
0.646
0.323
0.244
0.839
0.161
0.795
0.169
0.134
0.086
0.127
0.048
0.224
0.203
0.118
0.030
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1309029
Version: J13
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309029
Version: J13
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