Automotive Dual N-Channel 80 V (D-S) 175 °C MOSFET
PowerPAK
®
SO-8L
Dual
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
D
1
• 100 % R
g
and UIS tested
1
2
S
1
G
1
D
2
6
.
15
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
1
D
2
m
m
1
Top View
13
5.
m
m
4
G
2
Bottom View
3
S
2
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A) per leg
Configuration
Package
80
0.0190
0.0240
30
Dual
PowerPAK SO-8L
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction)
Pulsed drain current
b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
b
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
a
SYMBOL
V
DS
V
GS
T
C
= 25 °C
a
T
C
= 125 °C
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
80
± 20
30
20
30
84
20
20
48
16
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
85
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1948-Rev. A, 26-Sep-16
Document Number: 76245
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJB80EP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
DS
= 80 V
V
DS
= 80 V, T
J
= 125 °C
V
DS
= 80 V, T
J
= 175 °C
V
DS
5 V
I
D
= 8 A
I
D
= 5 A
I
D
= 8 A, T
J
= 125 °C
I
D
= 8 A, T
J
= 175 °C
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 10 V
MIN.
80
1.5
-
-
-
-
20
-
-
-
-
-
-
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
V
GS
= 10 V
V
DS
= 40 V, I
D
= 1.5 A
f = 1 MHz
V
DD
= 40 V, R
L
= 26.7
I
D
1.5 A, V
GEN
= 10 V, R
g
= 1
-
-
0.22
-
-
-
-
b
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
TYP.
-
2.0
-
-
-
-
-
0.0155
0.0196
-
-
29
1015
445
25
20
3.6
3.2
0.46
10
3
23
24
-
0.84
37
43
22
18
-2.2
MAX.
-
2.5
± 100
1
50
150
-
0.0190
0.0240
0.0317
0.0395
-
1400
600
35
32
-
-
0.80
20
10
40
40
84
1.2
80
100
-
-
-5
UNIT
V
nA
μA
A
Drain-source on-state resistance
a
R
DS(on)
Forward transconductance
b
Dynamic
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
RM(REC)
V
DS
= 15 V, I
D
= 8 A
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
c
Gate-source charge
c
Gate-drain charge
Gate resistance
Turn-on delay time
c
Rise time
c
c
pF
nC
Turn-off delay time
c
Fall time
c
Pulsed current
a
Forward voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
ns
Source-Drain Diode Ratings and Characteristics
-
I
F
= 8 A, V
GS
= 0 V
-
-
I
F
= 5 A, di/dt = 100 A/μs
-
-
-
-
A
V
ns
nC
ns
A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1948-Rev. A, 26-Sep-16
Document Number: 76245
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJB80EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
80
V
GS
= 10 V thru 5 V
Vishay Siliconix
Axis Title
10000
65
10000
64
2nd line
I
D
- Drain Current (A)
V
GS
= 4 V
52
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
T
C
= 25 °C
48
39
32
100
16
V
GS
= 3 V
26
100
13
T
C
= 125 °C
T
C
= -55 °C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Axis Title
60
T
C
= 25 °C
T
C
= -55 °C
Transfer Characteristics
Axis Title
10000
0.05
10000
2nd line
g
fs
- Transconductance (S)
1000
1st line
2nd line
36
T
C
= 125 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
48
0.04
1000
V
GS
= 4.5 V
24
100
12
0.02
100
0.01
V
GS
= 10 V
0
0
6
12
18
24
30
I
D
- Drain Current (A)
2nd line
10
0.00
0
10
20
30
40
50
I
D
- Drain Current (A)
2nd line
10
Transconductance
Axis Title
1500
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
10
On-Resistance vs. Drain Current
Axis Title
10000
I
D
= 1.5 A
V
DS
= 40 V
1200
2nd line
C - Capacitance (pF)
C
iss
8
1000
1st line
2nd line
900
1000
1st line
2nd line
100
2
10
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
2nd line
6
600
C
oss
4
100
300
C
rss
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
Capacitance
Gate Charge
S16-1948-Rev. A, 26-Sep-16
Document Number: 76245
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
0.03
SQJB80EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
2.5
2nd line
R
DS(on)
- On-Resistance (Normalized)
I
D
= 6 A
V
GS
= 10 V
Vishay Siliconix
Axis Title
10000
100
10000
2.1
10
1000
1st line
2nd line
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
1000
1st line
2nd line
T
J
= 25 °C
1.7
V
GS
= 4.5 V
1
1.3
0.1
100
100
0.9
0.01
0.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
On-Resistance vs. Junction Temperature
Axis Title
0.10
10000
0.5
Source Drain Diode Forward Voltage
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.08
1000
1st line
2nd line
0.06
2nd line
V
GS(th)
Variance (V)
0.2
1000
I
D
= 5 mA
0.04
T
J
= 150 °C
-0.4
100
-0.7
100
0.02
T
J
= 25 °C
I
D
= 250 μA
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
-1.0
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
10
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
104
2nd line
V
DS
- Drain-to-Source Voltage (V)
I
D
= 1 mA
10000
100
1000
1st line
2nd line
96
92
100
88
84
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
Drain Source Breakdown vs. Junction Temperature
S16-1948-Rev. A, 26-Sep-16
Document Number: 76245
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Embedded System
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