E2G0057-17-41
¡ Semiconductor
MSM51V4256A
¡ Semiconductor
This version: Jan. 1998
MSM51V4256A
Previous version: May 1997
262,144-Word
¥
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V4256A is a 262,144-word
¥
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM51V4256A achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM51V4256A is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ,
or 20-pin plastic ZIP.
FEATURES
• 262,144-word
¥
4-bit configuration
• Single 3.3 V power supply, 0.3 V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 512 cycles/8 ms
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
20-pin 300 mil plastic DIP
(DIP20-P-300-2.54-W1) (Product : MSM51V4256A-xxRS)
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM51V4256A-xxJS)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM51V4256A-xxZS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM51V4256A-70
MSM51V4256A-80
MSM51V4256A-10
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
70 ns 40 ns 25 ns 25 ns
80 ns 45 ns 25 ns 25 ns
100 ns 50 ns 30 ns 30 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
130 ns
150 ns
190 ns
162 mW
144 mW
126 mW
1.8 mW
1/17
¡ Semiconductor
MSM51V4256A
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
V
CC
+ 0.3
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A8)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
5
5
6
Unit
pF
pF
pF
4/17
¡ Semiconductor
DC Characteristics
MSM51V4256A
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Symbol
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Condition
I
OH
= –2.0 mA
I
OL
= 2.0 mA
0 V
£
V
I
£
V
CC
+ 0.3 V;
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
3.6 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
MSM51V4256 MSM51V4256 MSM51V4256
A-70
A-80
A-10
Unit Note
Min.
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
V
V
mA
2.4
0
–10
V
OH
V
OL
I
LI
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
45
2
0.5
—
—
—
40
2
0.5
—
—
—
35
2
0.5
mA
1, 2
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
mA
1
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
—
45
—
40
—
35
mA
1, 2
I
CC5
CAS
= V
IL
,
DQ = enable
—
5
—
5
—
5
mA
1
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
—
45
—
40
—
35
mA
1, 2
I
CC7
CAS
cycling,
t
PC
= Min.
—
40
—
35
—
30
mA
1, 3
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
5/17
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