Semiconductor
MR53V8002J
524,288-Word X 16-Bit or 1,048,576-Word X 8-Bit MASK ROM
This version: Feb. 1999
Previous version: -------
Preliminary
DESCRIPTION
The MR53V8002J is a 8Mbit Read-Only Memory whose configuration can be electrically switched
between 524,288 word x 16bit and 1,048,576 word x 8bit. The MR53V8002J operates asynchronously,
external clocks are not required, making this device easy-to-use. The MR53V8002J is suitable as
large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS
silicon gate technology and is offered in 42-pin DIP, 44-pin SOP or 44-pin TSOP packages.
FEATURES
· 524,288 word x 16bit / 1,048,576 word x 8bit electrically switchable configuration
· Single +2.7V~3.6V power supply
· Access time
· V
CC
Power supply current
· V
CC
Standby current
· Three-state output
· Packages
42-pin plastic DIP
44-pin plastic SOP
(DIP42-P-600-2.54)
(SOP44-P-600-1.27-K)
MR53V8002J-XXRA
MR53V8002J-XXMA
100ns
40mA
10mA
· Input / Output TTL compatible
44-pin plastic TSOP (TSOPII44-P-400-0.80-K) MR53V8002J-XXTP
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Semiconductor
MR53V8002J
BLOCK DIAGRAM
A-1
BYTE
X8/X16 SWITCH
CE
OE
CE
OE
CONTROL
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
Row
Decoder
Address
Buffer
Memory Cell
Matrix
524,288 x 16 or 1,048,676 x 8
Column
Decoder
Multiplex
Output Buffer
D0 D1 D2 D3 D4 D5 D6 D7
D8 D9 D10 D11 D12 D13 D14 D15
FUNCTION TABLE
MODE
STAND BY
OUTPUT DISABLE
READ(16-BIT)
READ(8-BIT)
CE
H
L
L
L
L
OE
X
H
H
L
L
BYTE
X
H
L
H
L
D0~D7
D8~D14
Hi-Z
D
OUT
Hi-Z
L/H
L/H
A-1/D15
D
OUT
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Semiconductor
MR53V8002J
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Power dissipation per package
Symbol
T
OPR
T
STG
V
I
V
O
V
CC
P
D
Condition
-
-
Relative to V
SS
-
Value
0 ~ 70
-55 ~ 125
-0.5 ~ V
CC
+0.5
-0.5 ~ V
CC
+0.5
-0.5 ~ 5
1.0
Unit
`C
`C
V
V
V
W
RECOMMENDED OPERATING CONDITIONS FOR READ
Parameter
V
CC
power supply voltage
Input “H“ level
Input “L“ level
Voltage is relative to V
SS
Symbol
V
CC
V
IH
V
IL
Condition
V
CC
=2.7V ~ 3.6V
Min.
2.7
2.2
-0.5
Typ.
-
-
-
(Ta=0 ~ 70`C)
Min.
Unit
3.6
`C
V
CC
+0.5
`C
0.8
V
PIN Capacitance
Parameter
Input
Output
Symbol
C
IN
C
OUT
Condition
V
I
=0V
V
O
=0V
(Vcc=3.3V, Ta=25`C, f=1MHz)
Min.
Typ.
Min.
Unit
-
-
12
pF
-
-
15
pF
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Semiconductor
MR53V8002J
ELECTRICAL CHARACTERISTICS
DC Characteristics
Parameter
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current
(Active)
Input “H“ level
Input “L“ level
Output “H“ level
Output “L“ level
Voltage is relative to V
SS
AC Characteristics
Parameter
Address access cycle time
Address access time
CE access time
OE access time
Output disable time
Output hold time
Symbol
T
C
T
ACC
T
CE
T
OE
T
CHZ
T
OHZ
T
OH
Condition
-
CE=OE= V
IL
OE= V
IL
CE= V
IL
OE= V
IL
CE= V
IL
CE=OE= V
IL
Symbol
C
IN
C
OUT
I
CCSC
I
CCST
I
CCA
V
IH
V
IL
V
OH
V
OL
Condition
V
I
=0V~V
CC
V
O
=0V~V
CC
CE= V
CC
CE= V
IH
CE= V
IL
, OE= V
IH
tc= 100ns
-
-
I
OH
=-200
mA
I
OL
=1mA
(Vcc=2.7V~3.6V, Ta=0~70`C)
Min.
Typ.
Min.
Unit
-
-
10
mA
-
-
10
mA
-
-
10
mA
-
-
1
mA
-
2.0
-0.5
V
CC
-0.4
-
-
-
-
-
-
40
V
CC
+0.5
0.8
-
0.4
mA
V
V
V
V
(Vcc=2.7V~3.6V, Ta=0~70`C)
Min.
Min.
Unit
100
-
ns
-
100
ns
-
100
ns
-
30
ns
0
30
ns
0
25
ns
0
-
ns
Measurement condition
Input signal level
Input timing reference level
Output load
Output timing reference level
1.7V
0V/3V
0.8V/2.0V
100pF
0.8V/2.0V
400W
Output
100pF
5/6
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