ZENER DIODE
AW01
FEATURES
•
For stabilized power supply.
•
Diffused-junction. Glass passivated and
encapsulated.
OUTLINE DRAWING
φ
3.5 MAX
(0.14)
Unit in mm(inch)
Cathode band (Red)
Type mark (Red)
29MIN.
(1.14)
62MIN. (2.44)
5MAX
(0.2)
29MIN.
(1.14)
φ
0.8
(0.03)
Direction of polarity
06NA
Weight: 0.35 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Permissible Power Dissipation
Operating Junction Temperature
Storage Temperature
Maximum Permissible Current
Non-Repetitive Peak Reverse One-
Cycle Dissipation
Symbols
P
T
j
T
stg
I
ZM
P
RSM
Units
W
°C
°C
mA
Wp
Ratings
1.0
-40 ~ +150
-40 ~ +150
Refer to characteristics column
80
Notes
(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(T
L
=25°C)
Type
Characteristics
Zener Voltage Vz (V)
Maximum
Dynamic
Impedance
Minimum
Maximum
Zz (ohm)
5.2
6.2
7.7
8.5
9.4
10.4
11.4
12.4
13.5
15.3
16.8
18.8
20.8
22.7
25.1
28.0
31.0
6.8
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
9
7
3
3
5
5
8
8
12
12
15
15
15
15
15
15
15
Test Current
Iz
(mA)
60
25
25
25
25
25
25
25
15
15
15
15
15
10
10
10
10
Maximum
Permissible
Current
(TL=100°C)
(L=10mm)
I
ZM
(mA)
160
135
120
105
95
85
75
70
65
60
52
48
43
40
35
32
30
AW01-06
AW01-07
AW01-08
AW01-09
AW01-10
AW01-11
AW01-12
AW01-13
AW01-15
AW01-16
AW01-18
AW01-20
AW01-22
AW01-24
AW01-27
AW01-30
AW01-33
Typical
Zener
Voltage
Temperature
Coefficient
γ
z(%/°C)
0.025
0.035
0.045
0.053
0.058
0.063
0.065
0.068
0.072
0.074
0.076
0.078
0.080
0.081
0.082
0.083
0.084
PDE-AW01-0
AW01
Typical zener characteristics
200
180
160
AW01-06
Typical dynamic impedance vs. zener current
100
TL=25˚C
AW01-07
AW01-08
AW01-09
AW01-10
AW01-11
AW01-12
AW01-13
140
120
100
80
60
40
20
DYNAMIC IMPEDANCE (Ω)
ZENER CURRENT (mA)
10
AW01-15
AW01-16
AW01-18
AW01-20
AW01-22
AW01-24
AW01-24
AW01-27
AW01-30
AW01-33
1
AW01-16
AW01-07
0
0
4
8
12
16
20
24
28
32
0.3
1
10
ZENER CURRENT (mA)
100
ZENER VOLTAGE (V)
Max. allowable power dissipation vs. ambient temperature
1.4
Max. allowable power dissipation vs. lead temperature
1.4
MAX. ALLOWABLE PWOER DISSIPATION (W)
1.2
MAX. ALLOWABLE PWOER DISSIPATION (W)
1.2
1.0
1.0
0.8
Lead length
L=10mm
20mm
25mm
L
L
0.8
Lead length
L=10mm
20mm
25mm
L
L
0.6
0.6
0.4
0.4
0.2
PC board (100x180x1.6t)
Copper foil ( 5.5)
0.2
Lead temp
PC board
(100x180x1.6t)
Copper foil ( 5.5)
0
0
20
40
60
80
100
120
140
0
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE (˚C)
LEAD TEMPERATURE (˚C)
Reverse power characteristic
(Non-repetitive)
REVERSE INSTANTANEOUS PWER DISSIPATION (W)
100
Reverse
instantaneous
loss
Steady state thermal impedance
140
STEADY STATE THERMAL IMPEDANCE (˚C/W)
10ms
1 cycle
120
100
80
Rth(j - l)
60
40
20
0
Ambient temp. measured point
Lead temp.
Lead
measured poin
length
(φ0.5 thermocouple)
2
Copper foil ( 5.5)
15
Lead
length
Rth(j - a)
50
20
PC board
(100×180×1.6t)
0
1
10
CYCLES
100
0
10
20
30
LEAD LENGTH (mm)
PDE-AW01-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
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