BGU8006
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo
and Compass
Rev. 3 — 17 November 2016
Product data sheet
1. Product profile
1.1 General description
The BGU8006 is a Low Noise Amplifier (LNA) for GNSS receiver applications. It comes as
extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8006
requires one external matching inductor and one external decoupling capacitor.
The BGU8006 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance when jamming signals from co-existing cellular
transmitters are present. At low jamming power levels it delivers 17.2 dB gain at a noise
figure of 0.60 dB. During high jamming power levels, resulting for example from a cellular
transmit burst, it temporarily increases its bias current to improve sensitivity.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Covers full GNSS L1 band, from 1559 MHz to 1610 MHz
Noise figure (NF) = 0.60 dB
Gain 17.2 dB
High input 1 dB compression point of
7.5
dBm
High out of band IP3
i
of 6 dBm
Supply voltage 1.5 V to 3.1 V
Optimized performance at very low 3.6 mA supply current
Power-down mode current consumption < 1
A
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor and one supply decoupling capacitor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Extremely small Wafer Level Chip Scale Package (WLCSP) 0.65
0.44
0.2 mm;
6 solder bumps; 0.22 mm bump pitch
180 GHz transit frequency - SiGe:C technology
NXP Semiconductors
BGU8006
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
1.3 Applications
LNA for GPS, GLONASS, Galileo and Compass (BeiDou) in smart phones, feature
phones, tablet, digital still cameras, digital video cameras, RF front-end modules,
complete GNSS modules and personal health applications.
1.4 Quick reference data
Table 1.
Quick reference data
f = 1575 MHz; V
CC
= 2.85 V; P
i
<
40 dBm; T
amb
= 25
C; input matched to 50
using a
5.6 nH inductor, see
Figure 2;
unless otherwise specified.
Symbol Parameter
V
CC
I
CC
supply voltage
supply current
V
I(ENABLE)
0.8 V
P
i
<
40
dBm
P
i
=
20
dBm
G
p
NF
P
i(1dB)
IP3
i
[1]
[2]
[3]
Conditions
Min Typ Max Unit
1.5
-
-
-
-
[1]
[2]
-
3.6
8.4
3.1
-
-
V
mA
mA
dB
dB
dB
dB
dBm
dBm
power gain
noise figure
input power at 1 dB gain compression
input third-order intercept point
PCB losses are subtracted.
Including PCB losses.
P
i
<
40
dBm
P
i
=
20
dBm
P
i
<
40
dBm
P
i
<
40
dBm
f = 1575 MHz
f = 1575 MHz
[3]
17.2 -
19.0 -
0.60 -
0.65 -
7.5
-
6
-
-
-
-
-
f
1
= 1713 MHz; f
2
= 1851 MHz; P
i
=
20
dBm per carrier.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
GND_RF
RF_IN
ENABLE
GND
V
CC
RF_OUT
Bump side view
Simplified outline
Graphic symbol
3. Ordering information
Table 3.
Type
number
Ordering information
Package
Name
Description
Version
BGU8006 WLCSP6 extremely small wafer level chip scale package; 6 solder bumps; WLCSP6
0.22 mm bump pitch; body 0.65
0.44
0.2 mm
OM7829
BGU8006
EVB
BGU8006 evaluation board
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 17 November 2016
2 of 19
NXP Semiconductors
BGU8006
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
4. Marking
Table 4.
BGU8006
[1]
Marking codes
Marking code
single character, indicating assembly month.
[1]
Type number
Month code see
Table 5.
Table 5.
Calender marking month code
1 indicates pin 1.
Year
2015
2016
2017
[1]
[1]
Month
J
A
M
Y
F
B
N
Z
M
C
O
b
A
D
P
d
M
E
Q
f
J
F
R
h
J
G
S
3
A
H
T
4
S
I
U
5
O
J
V
6
N
K
W
7
D
L
X
9
Rotates every 3 years.
Pin 1 location: the marking stripes below character indicate the side where pin 1 is located.
Fig 1.
Marking code description
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Absolute Maximum Ratings are given as Limiting Values of stress conditions during operation, that must not be exceeded
under the worst probable conditions.
Symbol
V
CC
V
I(ENABLE
)
V
I(RF_IN)
V
I(RF_OUT)
P
i
BGU8006
Parameter
supply voltage
input voltage on pin ENABLE
input voltage on pin RF_IN
input voltage on pin RF_OUT
input power
Conditions
[1]
Min
0.5
0.5
0.5
0.5
-
[1][2]
[1][2][3]
[1][2][3]
[1]
Max
+5.0
+5.0
+5.0
+5.0
10
Unit
V
V
V
V
dBm
V
I(ENABLE)
< V
CC
+ 0.6 V
DC, V
I(RF_IN)
< V
CC
+ 0.6 V
DC, V
I(RF_OUT)
< V
CC
+ 0.6 V
1575 MHz
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 17 November 2016
3 of 19
NXP Semiconductors
BGU8006
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Absolute Maximum Ratings are given as Limiting Values of stress conditions during operation, that must not be exceeded
under the worst probable conditions.
Symbol
T
stg
T
j
V
ESD
Parameter
storage temperature
junction temperature
electrostatic discharge voltage
Human Body Model (HBM) According to
JEDEC standard 22-A114E
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
[1]
[2]
[3]
Stressed with pulses of 200 ms in duration, with application circuit as in
Figure 2.
Warning: due to internal ESD diode protection, the applied DC voltage should not exceed
V
CC
+ 0.6 V
and shall not exceed 5.0 V in
order to avoid excess current.
The RF input and RF output are AC coupled through internal DC blocking capacitors.
Conditions
Min
65
-
-
-
Max
+150
150
2
2
Unit
C
C
kV
kV
6. Recommended operating conditions
Table 7.
Symbol
V
CC
T
amb
V
I(ENABLE)
Operating conditions
Parameter
supply voltage
ambient temperature
input voltage on pin ENABLE
OFF state
ON state
Conditions
Min Typ Max Unit
1.5
40
-
0.8
-
-
-
3.1
V
C
V
+25 +85
-
0.35 V
7. Thermal characteristics
Table 8.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
217
Unit
K/W
8. Characteristics
Table 9.
Characteristics at V
cc
= 1.8 V
f = 1575 MHz; V
CC
= 1.8 V; V
I(ENABLE)
>= 0.8 V; P
i
<
40 dBm; T
amb
= 25
C; input matched to 50
using a 5.6 nH inductor, see
Figure 2;
unless otherwise specified.
Symbol Parameter
I
CC
supply current
Conditions
V
I(ENABLE)
0.8 V
P
i
<
40
dBm
P
i
=
20
dBm
V
I(ENABLE)
0.35 V
G
p
power gain
no jammer
P
jam
=
20
dBm; f
jam
= 850 MHz
P
jam
=
20
dBm; f
jam
= 1850 MHz
-
-
-
-
-
-
3.5
8
-
17.0
17.5
19.0
-
-
1
-
-
-
mA
mA
A
dB
dB
dB
Min
Typ
Max Unit
BGU8006
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 17 November 2016
4 of 19
NXP Semiconductors
BGU8006
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
Table 9.
Characteristics at V
cc
= 1.8 V
…continued
f = 1575 MHz; V
CC
= 1.8 V; V
I(ENABLE)
>= 0.8 V; P
i
<
40 dBm; T
amb
= 25
C; input matched to 50
using a 5.6 nH inductor, see
Figure 2;
unless otherwise specified.
Symbol Parameter
RL
in
RL
out
ISL
NF
input return loss
output return loss
isolation
noise figure
P
i
=
40
dBm, no jammer
P
i
=
40
dBm, no jammer
P
jam
=
20
dBm; f
jam
= 850 MHz
P
jam
=
20
dBm; f
jam
= 1850 MHz
P
i(1dB)
IP3
i
t
on
t
off
input power at 1 dB
gain compression
input third-order
intercept point
turn-on time
turn-off time
f = 1.575 GHz
time from V
I(ENABLE)
ON, to 90 % of
the gain
time from V
I(ENABLE)
OFF, to 10 % of
the gain
[3]
[1]
[2]
[2]
[2]
Conditions
P
i
<
40
dBm
P
i
=
20
dBm
P
i
<
40
dBm
P
i
=
20
dBm
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
9
14
13
11
27
0.60
0.65
0.7
0.9
Max Unit
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
s
s
11.2
-
0
-
-
-
2
1
[1]
[2]
[3]
PCB losses are subtracted
Including PCB losses
f
1
= 1713 MHz; f
2
= 1851 MHz, P
i
=
20
dBm per carrier.
Table 10. Characteristics at V
cc
= 2.85 V
f = 1575 MHz; V
CC
= 2.85 V; V
I(ENABLE)
>= 0.8 V; P
i
<
40 dBm; T
amb
= 25
C; input matched to 50
using a 5.6 nH inductor, see
Figure 2;
unless otherwise specified.
Symbol Parameter
I
CC
supply current
Conditions
V
I(ENABLE)
0.8 V
P
i
<
40
dBm
P
i
=
20
dBm
V
I(ENABLE)
0.35 V
G
p
power gain
no jammer
P
jam
=
20
dBm; f
jam
= 850 MHz
P
jam
=
20
dBm; f
jam
= 1850 MHz
RL
in
RL
out
ISL
NF
input return loss
output return loss
isolation
noise figure
P
i
=
40
dBm, no jammer
P
i
=
40
dBm, no jammer
P
jam
=
20
dBm; f
jam
= 850 MHz
P
jam
=
20
dBm; f
jam
= 1850 MHz
BGU8006
All information provided in this document is subject to legal disclaimers.
Min Typ Max Unit
-
-
-
-
-
-
-
-
-
-
-
[1]
[2]
[2]
[2]
3.6
8.4
-
-
-
1
mA
mA
A
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
17.2 -
18.0 -
19.0 -
9
15
13
11
27
-
-
-
-
-
P
i
<
40
dBm
P
i
=
20
dBm
P
i
<
40
dBm
P
i
=
20
dBm
-
-
-
-
0.60 -
0.65 -
0.65 -
0.9
-
© NXP B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 17 November 2016
5 of 19
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