BCY58-VIII datasheet, PDF - EEWORLD Datasheet

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BCY58-VIII: DescriptionBipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W; CategoryDiscrete semiconductor The transistor; File Size610KB，3 Pages; ManufacturerCentral Semiconductor

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BCY58-VIII Overview

Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W

BCY58-VIII Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	HERMETIC SEALED, METAL PACKAGE-3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	45
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Maximum off time (toff)	800 ns
Maximum opening time (tons)	150 ns

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BCY58, VII, VIII, IX, X

BCY59, VII, VIII, IX, X

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCY58 and BCY59

series types are silicon NPN epitaxial planar transistors,

mounted in a hermetically sealed metal case, designed

for low noise amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IBM

PD

TJ, Tstg



JA



JC

BCY58

32

BCY59

45

UNITS

V

mA

mW

W

°C

°C/W

7.0

100

200

340

1.0

-65 to +200

450

150

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=Rated VCBO

VCB=Rated VCBO, TA=150°C

VEB=5.0V

IC=10μA (BCY58)

32

IC=10μA (BCY59)

45

IC=2.0mA (BCY58)

32

IC=2.0mA (BCY59)

45

IE=1.0μA

7.0

IC=10mA, IB=250μA

IC=100mA, IB=2.5mA

IC=10mA, IB=250μA

0.60

IC=100mA, IB=2.5mA

0.75

BCY58-VII

BCY59-VII

MIN TYP MAX

-

20

-

120 -

220

80

-

40

-

MAX

10

0.35

0.70

0.85

1.20

BCY58-IX

BCY59-IX

MIN MAX

40

-

250 460

160 630

60

-

UNITS

nA

μA

nA

V

BCY58-X

BCY59-X

MIN MAX

100

-

380 630

240 1000

60

-

hFE

VCE=5.0V,

VCE=1.0V,

IC=10μA

IC=2.0mA

IC=10mA

IC=100mA

BCY58-VIII

BCY59-VIII

MIN MAX

20

-

180 310

120 400

45

-

R2 (8-November 2013)

BCY58-VIII Related Products

	BCY58-VIII	BCY58-X	BCY58-IX	BCY58-VII
Description	Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W	Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W	Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W	Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	HERMETIC SEALED, METAL PACKAGE-3	HERMETIC SEALED, METAL PACKAGE-3	CYLINDRICAL, O-MBCY-W3	HERMETIC SEALED, METAL PACKAGE-3
Reach Compliance Code	unknown	unknown	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	45	60	60	40
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz
Maximum off time (toff)	800 ns	800 ns	800 ns	800 ns
Maximum opening time (tons)	150 ns	150 ns	150 ns	150 ns

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