AT49BV321-85TI datasheet, PDF - EEWORLD Datasheet

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AT49BV321-85TI: Description32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory; Categorystorage storage; File Size384KB，30 Pages; ManufacturerAtmel (Microchip)

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AT49BV321-85TI Overview

32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory

AT49BV321-85TI Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Atmel (Microchip)
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	85 ns
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G48
JESD-609 code	e0
length	18.4 mm
memory density	33554432 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	8,63
Number of terminals	48
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	4K,32K
Maximum standby current	0.00001 A
Maximum slew rate	0.065 mA
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.65 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	12 mm
Base Number Matches	1

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Features

•

Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)

•

Access Time – 85 ns

•

Sector Erase Architecture

•

– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout

– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Fast Word Program Time – 15 µs

Fast Sector Erase Time – 200 ms

Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase

of a Different Sector

– Supports Reading Any Byte/Word by Suspending Programming of Any

Other Byte/Word

Low-power Operation

– 25 mA Active

– 10 µA Standby

Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

VPP Pin for Write Protection

RESET Input for Device Initialization

Sector Lockdown Support

TSOP, CBGA and µBGA Package Options

Top or Bottom Boot Block Configuration Available

128-bit Protection Register

•

32-megabit

(2M x 16/4M x 8)

3-volt Only

Flash Memory

AT49BV320

AT49BV320T

AT49BV321

AT49BV321T

AT49LV320

AT49LV320T

AT49LV321

AT49LV321T

Recommend Using

AT49BV320A(T)/322A(T)

for New Designs.

Description

The AT49BV/LV32X(T) is a 3.0-volt 32-megabit Flash memor y organized as

2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data

appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided

into 71 sectors for erase operations. The device is offered in 48-lead TSOP, and

48-ball CBGA and µBGA packages. The device has CE and OE control signals to

avoid any bus contention. This device can be read or reprogrammed using a single

power supply, making it ideally suited for in-system programming.

Pin Configurations

Pin Name

A0 - A20

RESET

RDY/BUSY

VPP

I/O0 - I/O14

I/O15 (A-1)

BYTE

VCCQ

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

READY/BUSY Output

Write Protection

Data Inputs/Outputs

I/O15 (Data Input/Output, Word Mode)

A-1 (LSB Address Input, Byte Mode)

Selects Byte or Word Mode

No Connect

Output Power Supply

Rev. 1494H–FLASH–01/03

AT49BV/LV320(T)/321(T)

The device powers on in the read mode. Command sequences are used to place the device in

other operation modes such as program and erase. The device has the capability to protect

the data in any sector (see “Sector Lockdown” section).

To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend

feature. This feature will put the erase or program on hold for any amount of time and let the

user read data from or program data to any of the remaining sectors within the memory. The

end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by

the toggle bit.

The VPP pin provides data protection. When the V

input is below 0.8V, the program and

erase functions are inhibited. When V

is at 1.65V or above, normal program and erase oper-

ations can be performed.

A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement

of entering the three-byte program sequence is offered to further improve programming time.

After entering the six-byte code, only single pulses on the write control lines are required for

writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering

down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing

it back to V

. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will

not work while in this mode; if entered they will result in data being programmed into the

device. It is not recommended that the six-byte code reside in the software of the final product

but only exist in external programming code.

When using the AT49BV/LV320(T) pinout configuration, the device always operates in the

word mode. In the AT49BV/LV321(T) configuration, the BYTE pin controls whether the device

data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the

device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE.

If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins

I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-

stated, and the I/O15 pin is used as an input for the LSB (A-1) address function.

1494H–FLASH–01/03

AT49BV/LV320(T)/321(T)

Device

Operation

READ:

The AT49BV/LV32X(T) is accessed like an EPROM. When CE and OE are low and

WE is high, the data stored at the memory location determined by the address pins are

asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE

is high. This dual-line control gives designers flexibility in preventing bus contention.

COMMAND SEQUENCES:

When the device is first powered on, it will be reset to the read or

standby mode, depending upon the state of the control line inputs. In order to perform other

device functions, a series of command sequences are entered into the device. The command

sequences are shown in the “Command Definition in Hex” table on page 12 (I/O8 - I/O15 are

don’t care inputs for the command codes). The command sequences are written by applying a

low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address

is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the

first rising edge of CE or WE. Standard microprocessor write timings are used. The address

locations used in the command sequences are not affected by entering the command

sequences.

RESET:

A RESET input pin is provided to ease some system applications. When RESET is at

a logic high level, the device is in its standard operating mode. A low level on the RESET input

halts the present device operation and puts the outputs of the device in a high impedance

state. When a high level is reasserted on the RESET pin, the device returns to the read or

standby mode, depending upon the state of the control inputs.

ERASURE:

Before a byte/word can be reprogrammed, it must be erased. The erased state of

memory bits is a logical “1”. The entire device can be erased by using the Chip Erase com-

mand or individual sectors can be erased by using the Sector Erase command.

CHIP ERASE:

The entire device can be erased at one time by using the six-byte chip erase

software code. After the chip erase has been initiated, the device will internally time the erase

operation so that no external clocks are required. The maximum time to erase the chip is t

If the sector lockdown has been enabled, the chip erase will not erase the data in the sector

that has been locked out; it will erase only the unprotected sectors. After the chip erase, the

device will return to the read or standby mode.

SECTOR ERASE:

As an alternative to a full chip erase, the device is organized into 71 sec-

tors (SA0 - SA70) that can be individually erased. The Sector Erase command is a six-bus

cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while

the 30H data input command is latched on the rising edge of WE. The sector erase starts after

the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will

automatically time to completion. The maximum time to erase a sector is t

SEC

. When the sec-

tor programming lockdown feature is not enabled, the sector will erase (from the same Sector

Erase command). An attempt to erase a sector that has been protected will result in the oper-

ation terminating in 2 µs.

BYTE/WORD PROGRAMMING:

Once a memory block is erased, it is programmed (to a logi-

cal “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the

internal device command register and is a four-bus cycle operation. The device will automati-

cally generate the required internal program pulses.

Any commands written to the chip during the embedded programming cycle will be ignored. If

a hardware reset happens during programming, the data at the location being programmed

will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase

operations can convert “0”s to “1”s. Programming is completed after the specified t

cycle

time. The Data Polling feature or the Toggle Bit feature may be used to indicate the end of a

program cycle. If the erase/program status bit is a “1”, the device was not able to verify that the

erase or program operation was performed successfully.

1494H–FLASH–01/03

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