AT28C64X-25PC datasheet, PDF - EEWORLD Datasheet

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AT28C64X-25PC: Description8K X 8 EEPROM 5V, 250 ns, PDIP28; Categorystorage storage; File Size219KB，11 Pages; ManufacturerAtmel (Microchip)

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AT28C64X-25PC Overview

8K X 8 EEPROM 5V, 250 ns, PDIP28

AT28C64X-25PC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	250 ns
Other features	10K OR 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE
command user interface	NO
Data polling	YES
Data retention time - minimum	10
Durability	10000 Write/Erase Cycles
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	36.95 mm
memory density	65536 bi
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	5.59 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
switch bit	NO
width	15.24 mm
Maximum write cycle time (tWC)	1 ms
Base Number Matches	1

AT28C64X-25PC Preview

AT28C64/X

Features

•

Fast Read Access Time - 120 ns

Fast Byte Write - 200

µs

or 1 ms

Self-Timed Byte Write Cycle

Internal Address and Data Latches

Internal Control Timer

Automatic Clear Before Write

Direct Microprocessor Control

READY/BUSY Open Drain Output

DATA Polling

Low Power

30 mA Active Current

100

µA

CMOS Standby Current

High Reliability

Endurance: 10

or 10

Cycles

Data Retention: 10 Years

10% Supply

CMOS and TTL Compatible Inputs and Outputs

JEDEC Approved Byte-Wide Pinout

Commercial and Industrial Temperature Ranges

64K (8K x 8)

CMOS

PROM

Description

The AT28C64 is a low-power, high-performance 8,192 words by 8 bit nonvolatile

Electrically Erasable and Programmable Read Only Memory with popular, easy to

use features. The device is manufactured with Atmel’s reliable nonvolatile technol-

ogy.

(continued)

Pin Configurations

Pin Name

A0 - A12

I/O0 - I/O7

RDY/BUSY

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

Ready/Busy Output

No Connect

Don’t Connect

PDIP, SOIC

Top View

AT28C64/X

LCC, PLCC

Top View

TSOP

Top View

Note: PLCC package pins 1 and

17 are DON’T CONNECT.

0001G

2-193

Description

(Continued)

The AT28C64 is accessed like a Static RAM for the read

or write cycles without the need for external components.

During a byte write, the address and data are latched in-

ternally, freeing the microprocessor address and data bus

for other operations. Following the initiation of a write cy-

cle, the device will go to a busy state and automatically

clear and write the latched data using an internal control

timer. The device includes two methods for detecting the

end of a write cycle, level detection of RDY/BUSY (unless

pin 1 is N.C.) and DATA POLLING of I/O

. Once the end

of a write cycle has been detected, a new access for a

read or write can begin.

The CMOS technology offers fast access times of 120 ns

at low power dissipation. When the chip is deselected the

standby current is less than 100

µA.

Atmel’s 28C64 has additional features to ensure high

quality and manufacturability. The device utilizes error cor-

rection internally for extended endurance and for im-

proved data retention characteristics. An extra 32-bytes of

PROM are available for device identification or tracking.

Block Diagram

Absolute Maximum Ratings*

Temperature Under Bias................. -55°C to +125°C

Storage Temperature...................... -65°C to +150°C

All Input Voltages

(including NC Pins)

with Respect to Ground ................... -0.6V to +6.25V

All Output Voltages

with Respect to Ground .............-0.6V to V

+ 0.6V

Voltage on OE and A9

with Respect to Ground ................... -0.6V to +13.5V

*NOTICE: Stresses beyond those listed under “Absolute Maxi-

mum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the

device at these or any other conditions beyond those indi-

cated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions

for extended periods may affect device reliability.

2-194

AT28C64/X

AT28C64/X

Device Operation

READ:

The AT28C64 is accessed like a Static RAM.

When CE and OE are low and WE is high, the data stored

at the memory location determined by the address pins is

asserted on the outputs. The outputs are put in a high im-

pedance state whenever CE or OE is high. This dual line

control gives designers increased flexibility in preventing

bus contention.

BYTE WRITE:

Writing data into the AT28C64 is similar to

writing into a Static RAM. A low pulse on the WE or CE

input with OE high and CE or WE low (respectively) initi-

ates a byte write. The address location is latched on the

falling edge of WE (or CE); the new data is latched on the

rising edge. Internally, the device performs a self-clear be-

fore write. Once a byte write has been started, it will auto-

matically time itself to completion. Once a programming

operation has been initiated and for the duration of t

, a

read operation will effectively be a polling operation.

FAST BYTE WRITE:

The AT28C64E offers a byte write

time of 200

µs

maximum. This feature allows the entire

device to be rewritten in 1.6 seconds.

READY/BUSY:

Pin 1 is an open drain READY/BUSY

output that can be used to detect the end of a write cycle.

RDY/BUSY is actively pulled low during the write cycle

and is released at the completion of the write. The open

drain connection allows for OR-tying of several devices to

the same RDY/BUSY line. Pin 1 is not connected for the

AT28C64X.

DATA POLLING:

The AT28C64 provides DATA POLL-

ING to signal the completion of a write cycle. During a

write cycle, an attempted read of the data being written

results in the complement of that data for I/O

(the other

outputs are indeterminate). When the write cycle is fin-

ished, true data appears on all outputs.

WRITE PROTECTION:

Inadvertent writes to the device

are protected against in the following ways. (a) V

sense— if V

is below 3.8V (typical) the write function is

inhibited. (b) V

power on delay— once V

h a s

reached 3.8V the device will automatically time out 5 ms

(typical) before allowing a byte write. (c) Write Inhibit—

holding any one of OE low, CE high or WE high inhibits

byte write cycles.

CHIP CLEAR:

The contents of the entire memory of the

AT28C64 may be set to the high state by the CHIP CLEAR

operation. By setting CE low and OE to 12 volts, the chip

is cleared when a 10 msec low pulse is applied to WE.

DEVICE IDENTIFICATION:

A n e x t r a 3 2 - b y t e s o f

PROM memory are available to the user for device

identification. By raising A9 to 12

0.5V and using ad-

dress locations 1FE0H to 1FFFH the additional bytes may

be written to or read from in the same manner as the regu-

lar memory array.

2-195

DC and AC Operating Range

AT28C64-12

Operating

Temperature (Case)

Power Supply

Com.

Ind.

0°C - 70°C

-40°C - 85°C

10%

AT28C64-15

0°C - 70°C

-40°C - 85°C

10%

AT28C64-20

0°C - 70°C

-40°C - 85°C

10%

AT28C64-25

0°C - 70°C

-40°C - 85°C

10%

Operating Modes

Mode

Read

Write

(2)

Standby/Write Inhibit

Write Inhibit

Output Disable

Chip Erase

(1)

H (3)

3. V

= 12.0V

0.5V.

I/O

OUT

High Z

Notes: 1. X can be V

or V

2. Refer to AC Programming Waveforms.

DC Characteristics

Symbol

SB1

SB2

Parameter

Input Load Current

Output Leakage Current

Standby Current CMOS

Standby Current TTL

Active Current AC

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

= 2.1 mA

= 4.0 mA for RDY/BUSY

= -400

µA

2.4

2.0

.45

Condition

= 0V to V

+ 1V

I/O

= 0V to V

CE = V

- 0.3V to V

+ 1.0V

CE = 2.0V to V

+ 1.0V

f = 5 MHz; I

OUT

= 0 mA

CE = V

Com.

Ind.

Com.

Ind.

Min

Max

100

0.8

Units

µA

2-196

AT28C64/X

AT28C64/X

AC Read Characteristics

AT28C64-12

Symbol

ACC

CE (1)

OE (2)

DF (3, 4)

Parameter

Address to Output Delay

CE to Output Delay

OE to Output Delay

CE or OE High to Output

Float

Output Hold from OE, CE

or Address, whichever

occurred first

Min

Max

AT28C64-15

Min

Max

AT28C64-20

Min

Max

AT28C64-25

Min

Max

Units

120

150

200

250

100

AC Read Waveforms

(1, 2, 3, 4)

Notes: 1. CE may be delayed up to t

ACC

- t

after the address

transition without impact on t

ACC

2. OE may be delayed up to t

- t

after the falling

edge of CE without impact on t

or by t

ACC

- t

after an address change without impact on t

ACC

3. t

is specified from OE or CE whichever occurs first

= 5 pF).

4. This parameter is characterized and is not 100% tested.

Input Test Waveforms and

Measurement Level

Output Test Load

, t

< 20 ns

Pin Capacitance

(f = 1 MHz, T = 25°C)

(1)

Typ

OUT

Note:

Max

Units

Conditions

= 0V

OUT

= 0V

1. This parameter is characterized and is not 100% tested.

2-197

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