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2SCR533PFRAT100

Description
Bipolar Transistors - BJT NPN SOT-89 3A 180 to 450hFE 50V
Categorysemiconductor    Discrete semiconductor   
File Size1MB,8 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SCR533PFRAT100 Overview

Bipolar Transistors - BJT NPN SOT-89 3A 180 to 450hFE 50V

2SCR533PFRAT100 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage130 mV
Maximum DC Collector Current3 A
Gain Bandwidth Product fT320 MHz
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max450
PackagingCut Tape
PackagingMouseReel
PackagingReel
Continuous Collector Current3 A
DC Collector/Base Gain hfe Min180
Pd - Power Dissipation2 W
QualificationAEC-Q101
Factory Pack Quantity1000
2SCR533P FRA
Middle Power Transistor (50V / 3A)
Datasheet
AEC-Q101 Qualified
l
Outline
Parameter
Value
 
SOT-89
 
SC-62
 
 
V
CEO
I
C
50V
3A
MPT3
 
 
 
l
Features
l
Inner circuit
1)Low saturation voltage, typically
 
V
CE(sat)
=350mV(Max.)
 
(I
C
/I
B
=1A/50mA)
2)High speed switching
l
Application
LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
l
Packaging specifications
Part No.
Package
SOT-89
(MPT3)
Package
size
4540
Taping
code
T100
Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
180
12
1000
Marking
2SCR533P FRA
NM
                                                                                         
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
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