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BC108B

Description
Bipolar Transistors - BJT NPN Trans 30Vcbo 25Vceo 5.0Vebo 600mW
CategoryDiscrete semiconductor    The transistor   
File Size609KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

BC108B Overview

Bipolar Transistors - BJT NPN Trans 30Vcbo 25Vceo 5.0Vebo 600mW

BC108B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codeunknown
Samacsys DescriptionBipolar Transistors - BJT NPN Trans 30Vcbo 25Vceo 5.0Vebo 600mW
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC107, BC108,
BC109 series types are small signal NPN silicon
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
ICBO
ICBO
BVCEO
BVCEO
BVEBO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
hFE
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
JC
BC107
50
45
6.0
BC108
BC109
30
30
25
25
5.0
5.0
200
600
-65 to +200
175
UNITS
V
V
V
mA
mW
°C
°C/W
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=45V (BC107)
VCB=45V, TA=125°C (BC107)
VCB=25V (BC108, BC109)
VCB=25V, TA=125°C (BC108, BC109)
IC=2.0mA (BC107)
IC=2.0mA (BC108, BC109)
IE=10μA (BC107)
IE=10μA (BC108, BC109)
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
IC=2.0mA
IC=10mA
IC=10μA (BC107B, BC108B, BC109B)
IC=10μA (BC108C, BC109C)
0.55
40
100
45
25
6.0
5.0
TYP
MAX
15
4.0
15
4.0
UNITS
nA
μA
nA
μA
V
V
V
V
V
V
V
V
V
V
0.25
0.7
1.0
0.6
0.83
1.05
0.7
0.77
IC=2.0mA (BC107)
110
IC=2.0mA (BC107A)
110
IC=2.0mA (BC107B, BC108B, BC109B) 200
420
450
220
450
800
VCE=5.0V, IC=2.0mA (BC108C, BC109C)
R1 (16-August 2012)

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