DMJ70H900HJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
700V
R
DS(ON) Max
0.9Ω @ V
GS
= 10V
I
D
T
C
= +25°
C
7A
Features and Benefits
Low On-Resistance
High BV
DSS
Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
Case: TO251(Type TH)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.33 grams (Approximate)
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
TO251 (Type TH)
G
Top View
Bottom View
D
S
Internal Schematic
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMJ70H900HJ3
Notes:
Case
TO251 (Type TH)
Packaging
75 Pieces / Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO251 (Type TH)
70H900
YYWW
= Manufacturer’s Marking
70H900 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
DMJ70H900HJ3
Document number: DS39000 Rev. 2 - 2
1 of 7
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September 2016
© Diodes Incorporated
DMJ70H900HJ3
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
L = 60mH
L = 60mH
I
AS
E
AS
dv/dt
Value
700
±30
7
4
1.6
10
1.3
50
8
Unit
V
V
A
A
A
A
mJ
V/ns
NEW PRODUCT
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt
(Note 7)
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
C
= +25°
C
T
C
= +100°
C
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
68
27
79
1.8
-55 to +150
Unit
W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
700
2
Typ
3.4
0.7
0.85
603
230
16
4
18.4
2.1
9.8
8.7
18.7
28.5
10.7
239
2.2
Max
1
100
4
0.9
1.3
ns
µC
I
S
= 5A, di/dt = 100A/μs
nC
pF
Ω
Unit
V
µA
nA
V
Ω
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 700V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1.5A
V
GS
= 0V, I
S
= 5A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
V
DS
= 50V, f = 1MHz,
V
GS
= 0V
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DD
= 560V, I
D
= 5A,
V
GS
= 10V
ns
V
DD
= 350V, V
GS
= 10V,
R
g
= 4.7Ω, I
D
= 5A
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMJ70H900HJ3
Document number: DS39000 Rev. 2 - 2
2 of 7
www.diodes.com
September 2016
© Diodes Incorporated
DMJ70H900HJ3
10.0
9.0
I
D
, DRAIN CURRENT (A)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10
V
GS
= 3.5V
V
GS
= 4.5V
V
GS
= 4.0V
0
0
1
V
GS
=5.0V
V
GS
= 6.0V
I
D
, DRAIN CURRENT (A)
V
GS
= 8.0V
4
5
V
DS
= 10V
3
NEW PRODUCT
2
T
J
=125℃
T
J
=150℃
T
J
=85℃
T
J
=25℃
T
J
=-55℃
8
1
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (W)
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(W)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
I
D
, DRAIN-SOURCE CURRENT (A)
5
V
GS
= 10V
2.5
2
1.5
1
0.5
I
D
= 1.5A
0
0
5
10
15
20
25
V
GS
, GATE-SOURCE VOLTAGE (V)
30
Figure 3. Typical On-Resistance vs. Drain Current and Gate
Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (W)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55℃
25℃
125℃
85℃
V
GS
= 10V
150℃
3
2.5
2
1.5
1
0.5
0
-50
-25
Figure 4. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS
= 10V, I
D
= 0.6A
0
1
2
3
4
5
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (℃)
150
Figure 6. On-Resistance Variation with Temperature
DMJ70H900HJ3
Document number: DS39000 Rev. 2 - 2
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September 2016
© Diodes Incorporated
DMJ70H900HJ3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (W)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (℃)
150
V
GS
= 10V, I
D
= 1.5A
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (℃)
150
I
D
= 250μA
I
D
= 1mA
NEW PRODUCT
Figure 7. On-Resistance Variation with Temperature
10
10
9
I
S
, SOURCE CURRENT (A)
8
8
7
V
GS
(V)
6
5
4
3
2
1
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
T
J
=
125
o
C
T
J
=
85
o
C
6
V
GS
= 0V
Figure 8. Gate Threshold Variation vs. Junction
Temperature
V
DS
= 560V, I
D
= 5A
4
T
J
= 25
o
C
2
T
J
= -55
o
C
0
0
2
4
6
8
10 12
Qg (nC)
14
16
18
20
T
J
= 150
o
C
Figure 10. Gate Charge
100
10000
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
1000
C
iss
I
D
, DRAIN CURRENT (A)
R
DS(ON)
Limited
P
W
=1µs
10
P
W
=10µs
100
C
oss
1
P
W
=100µs
P
W
=1ms
P
W
=10ms
T
J(Max)
= 150℃ T
C
= 25℃
Single Pulse
DUT on infinite heatsink
V
GS
= 10V
1
P
W
=100ms
P
W
=1s
1000
10
C
rss
1
0.1
0
0
20
40 60 80 100 120 140 160 180 200
V
DS
, Drain-Source Voltage (V)
0.01
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Typical Junction Capacitance
DMJ70H900HJ3
Document number: DS39000 Rev. 2 - 2
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www.diodes.com
September 2016
© Diodes Incorporated
DMJ70H900HJ3
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
NEW PRODUCT
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 1.3℃/W
Duty Cycle, D = t1 / t2
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
1
10
0.001
1E-06
1E-05
DMJ70H900HJ3
Document number: DS39000 Rev. 2 - 2
5 of 7
www.diodes.com
September 2016
© Diodes Incorporated
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