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24AA1026T-E/SN

Description
I2C/2-WIRE SERIAL EEPROM
Categorystorage    storage   
File Size685KB,32 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

24AA1026T-E/SN Overview

I2C/2-WIRE SERIAL EEPROM

24AA1026T-E/SN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
package instructionSOIC-8
Reach Compliance Codecompli
Maximum clock frequency (fCLK)0.4 MHz
Data retention time - minimum200
Durability1000000 Write/Erase Cycles
I2C control byte1010DDMR
JESD-30 codeR-PDSO-G8
length4.9 mm
memory density1048576 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
reverse pinoutNO
Maximum seat height1.75 mm
Serial bus typeI2C
Maximum standby current0.000005 A
Maximum slew rate0.005 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.7 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width3.9 mm
Maximum write cycle time (tWC)5 ms
write protectHARDWARE
24AA1026/24LC1026/24FC1026
1024K I
2
C
Serial EEPROM
Device Selection Table:
Part
Number
24AA1026
24LC1026
24FC1026
V
CC
Range
1.7-5.5V
2.5-5.5V
1.8-5.5V
Max. Clock
Frequency
400 kHz
400 kHz*
1 MHz
Temp.
Ranges
I
I, E
I
100 kHz for V
CC
< 2.5V
*100 kHz for V
CC
<4.5V, E-temp
400 kHz for V
CC
< 2.5V
This device is capable of both random and sequential
reads. Reads may be sequential within address
boundaries 0000h to FFFFh and 10000h to 1FFFFh.
Functional address lines allow up to four devices on the
same data bus. This allows for up to 4 Mbits total
system EEPROM memory. This device is available in
the standard 8-pin PDIP, SOIC, SOIJ and TSSOP
packages.
Package Type
PDIP
NC
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
Features:
• Low-Power CMOS Technology:
- Read current 450
A,
maximum
- Standby current 5
A,
maximum
• 2-Wire Serial Interface, I
2
C™ Compatible
• Cascadable up to Four Devices
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kHz and 400 kHz Clock Compatibility
• 1 MHz Clock for FC Versions
• Page Write Time 3 ms, typical
• Self-Timed Erase/Write Cycle
• 128-Byte Page Write Buffer
• Hardware Write-Protect
• ESD Protection >4000V
• More than 1 Million Erase/Write Cycles
• Data Retention >200 Years
• Factory Programming Available
• Packages include 8-lead PDIP, SOIJ, SOIC and
TSSOP
• RoHS Compliant
• Temperature Ranges:
- Industrial (I):
-40C to +85C
- Automotive (E): -40C to +125C
SOIJ/SOIC/TSSOP
NC
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
Block Diagram
A1 A2
WP
HV Generator
I/O
Control
Logic
Memory
Control
Logic
XDEC
EEPROM
Array
Page Latches
I/O
SCL
YDEC
Description:
The Microchip Technology Inc. 24AA1026/24LC1026/
24FC1026 (24XX1026*) is a 128K x 8 (1024K bit)
Serial Electrically Erasable PROM, capable of
operation across a broad voltage range (1.7V to 5.5V).
It has been developed for advanced, low-power
applications such as personal communications or data
acquisition. This device has both byte write and page
write capability of up to 128 bytes of data.
SDA
V
CC
V
SS
Sense AMP
R/W Control
*24XX1026 is used in this document as a generic part number
for the 24AA1026/24LC1026/24FC1026 devices.
2011-2013 Microchip Technology Inc.
DS20002270D-page 1

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