Silicon Schottky Diode
LBAT60BT1
High current rectifier Schottky diode with
very low V
F
drop (typ. 0.24 V at I
F
= 10mA)
●
For power supply applications
●
For clamping and protection in
low voltage applications
●
For detection and step-up-conversion
●
SOD323
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Surge forward current, (t <10ms)
Total power dissipation
T
S
< 28°C
Junction temperature
Storage temperature
Symbol
V
R
I
F
I
FSM
P
TOT
Tj
Tstg
Value
10
3
5
1350
150
-55–150
Unit
V
A
mW
°C
Driver Marking
LBAT60BT1=5
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
VR = 5 V
VR = 8 V
VR = 5 V, TA = 80 °C
VR = 8 V, TA = 80 °C
Forward voltage
IF = 10 mA
IF = 100 mA
IF = 500 mA
IF = 1000 mA
AC Characteristics
Diode capacitance
V
R
= 5 V, f = 1 MHz
Symbol
IR
–
–
–
–
VF
0.2
0.26
0.32
0.36
C
T
12
0.24
0.32
0.4
0.48
25
0.3
0.38
0.5
0.6
30
P
f
min.
Values
typ.
max.
Unit
µA
5
10
100
410
15
25
800
1500
V
LBAT60BT1–1/4
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