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LMBTH10QLT1

Description
VHF/UHF Transistors
File Size128KB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet View All

LMBTH10QLT1 Overview

VHF/UHF Transistors

LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
3
COLLECTOR
LMBTH10QLT1
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
V
V
V
CEO
CBO
EBO
1
Value
25
30
3.0
Unit
Vdc
Vdc
Vdc
2
SOT-23
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
LMBTH10QLT1 = 3EQ
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0 )
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc
, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc
, I
C
= 0)
Collector Cutoff Current
( V
CB
= 25Vdc , I
E
= 0 )
Emitter Cutoff Current
( V
EB
= 2.0Vdc , I
C
= 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
30
3.0
100
100
Vdc
Vdc
nAdc
nAdc
V
(BR)CEO
25
Vdc
LMBTH10QLT1–1/5
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