1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
0.5W Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range 2.4 to 56 volts
- DO-35 package
- Through-hole device type mounting
- Hemetically sealed glass
- Compression bonded construction
- All extermal surfaces are corrosion
resistant and leads are readily solderable
- ROHS complaint
- Solder hot dip Tin(Sn) lead finish
- Cathode indicated by polarity band
- Packing code with suffix "G" means
Halogen-free
DO-35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power dissipation
Forward Voltage @I
F
=200mA
Operating and Storage Temperature Range
SYMBOL
P
D
V
F
T
J
, T
STG
VALUE
500
1.1
100
UNITS
mW
V
°C
Document Number: DS_S1410003
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
1N52xxB
(Note 1)
PART NO.
SUFFIX
(Note 2)
-xx
PACKING
CODE
R0
A0
PACKING CODE
SUFFIX
G
PACKAGE
DO-35
PACKING
10K / 14" Reel
5K / Box (Ammo)
Note 1: "xx" defines voltage from 2.4V (1N5221B) to 56V (1N5263B)
Note 2: Part No. Suffix „-xx “ would be used for special requirement
EXAMPLE
PREFERRED
PART NO.
1N5221B R0G
PART NO.
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
G
DESCRIPTION
Multiple manufacture
source
Halogen free
Define manufacture
source
Halogen free
Define manufacture
source
Halogen free
1N5221B
R0
1N5221B-L0 R0G
1N5221B
L0
R0
G
1N5221B-B0 R0G
1N5221B
B0
R0
G
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
500
1.3
V
Ztn
- Relative Voltage Change
1.2
V
Ztn
= V
Zt
/V
Z
(25
°C)
R
thJA
- Therm. Resist. Junction Ambient
(K/W)
400
TK
VZ
= 10 x 10
-
1.1
1.0
0.9
0.8
-60
0
60
120
8 x 10
-4
/K
6 x 10
-
4 x 10
-
2 x 10
-
4
/K
0
- 2 x 10
-
- 4 x 10
-
300
200
100
0
0
5
10
15
20
180
240
I - Lead Length (mm)
Fig. 3 Typical Change of Working Voltage VS. Junction
T
j
- Junction Temperature (°C)
Fig. 1 Thermal Resistance VS. Lead Length
1000
600
500
V
Z
- Voltage Change (mV)
T
j
= 25
o
C
100
Ptot - Total Power Dissipation (mW)
400
300
200
100
0
I
Z
= 5 mA
10
1
0
5
10
15
20
25
0
40
80
120
160
200
V
Z
- Z-Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 2 Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25
o
C
Fig.4 Total Power Dissipation VS. Ambient Temperature
Document Number: DS_S1410003
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
15
TK
VZ
- Temperature Coefficient of V
Z
(10
-4
/K)
100
80
I
Z
- Z-Current (mA)
60
40
20
0
10
P
tot
= 500 mW
T
amb
= 25
o
C
5
I
Z
= 5 mA
0
-5
0
10
20
30
40
50
0
2
4
6
8
10
V
Z
- Z-Voltage (V)
Fig. 5 Temperature Coefficient of Vz VS. Z-Voltage
V
Z
- Z-Voltage (V)
Fig.8 Z-Current VS. Z-Voltage
200
50
40
C
D
- Diode Capacitance (pF)
V
R
= 2 V
T
j
= 25
o
C
I
Z
- Z-Current (mA)
150
P
tot
= 500 mW
30
20
10
0
T
amb
= 25
°C
100
50
0
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
15
20
25
V
Z
- Z-Voltage (V)
30
35
Fig.6 Diode Capacitance VS. Z-Voltage
Fig. 9 Z-Current VS. Z-Voltage
100
10
I
F
- Forward Current (mA)
1
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1000
I
Z
= 1 mA
r
Z
- Differiential Z-Resistance (Ω)
100
T
j
= 25
o
C
5 mA
10
T
j
= 25
o
C
1
0
10 mA
5
10
15
20
25
V
F
- Forward Voltage (V)
Figure 7. Forward Current VS. Forward Voltage
V
Z
- Z-Voltage (V)
Fig.10 Differential Z-Resistance VS. Z-Voltage
Document Number: DS_S1410003
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
Z
thp
–The rmal Resistance for Pulse Cond. (KW)
1000
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
tp/T = 0.01
10
tp/T = 0.02
R
thJA
= 300 K/W
T = T
jmax
–T
amb
t
p
/T = 0.1
t
p
/T = 0.05
i
ZM
= (–VZ +(VZ
2
+ 4r
zj
x T/Z
thp
)
1 / 2
) /(2r
zj
)
1
0.1
1.0
10.0
100.0
1000.0
t
p
– Pulse Length (ms)
Fig. 11 Thermal Response
Document Number: DS_S1410003
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
Electrical Characteristics (Ratings at T
A
=25
o
C ambient temperature unless otherwise specified)
Vz @ Izt
Device
Voltage
Nominal
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
Current
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
Z
ZT
@ I
ZT
Ω
Max.
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
Z
ZK
@I
ZK
=0.25mA
Ω
Max.
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
I
R
@ V
R
V
R
μA
Max.
100
100
75
75
50.0
25.0
15.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
(Volts)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8
8.4
9
10
10
11
12
13
14
14
15
17
18
18
21
21
23
Document Number: DS_S1410003
Version: F1603
Embedded System
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