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FQD8P10TM_F085 100V P-Channel MOSFET
December 2010
FQD8P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
•
•
•
•
•
•
•
•
-6.6A, -100V, R
DS(on)
= 0.53Ω @V
GS
= -10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 30 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Qualified to AEC Q101
RoHS Compliant
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
Ratings
-100
-6.6
-4.2
-26.4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
150
-6.6
4.4
-6.0
2.5
44
0.35
-55 to +150
300
T
J
, T
STG
T
L
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
2.84
50
110
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
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