DU28120T
RF Power MOSFET Transistor
120 W, 2 - 175 MHz, 28 V
Features
Rev. V1
Package Outline
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
24
269
200
-55 to +150
0.65
Units
V
V
A
W
°C
°C
°C/W
LETTER
DIM
A
B
MILLIMETERS
MIN
24.64
18.29
21.21
12.60
6.22
3.81
5.33
5.08
3.05
2.29
4.06
6.68
.10
MAX
24.89
18.54
21.97
12.85
6.48
4.06
5.59
5.33
3.30
2.54
4.57
7.49
.15
MIN
.970
.720
.835
.496
.245
.150
.210
.200
.120
.90
.160
.263
.004
INCHES
MAX
.980
.730
.865
.506
.255
.160
.220
.210
.130
.100
.180
.295
.006
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
50
100
Z
IN
(Ω)
4.0 - j8.0
1.0 - j2.5
1.0 - j0.5
Z
LOAD
(Ω)
3.4 + j2.4
2.2 +j1.3
2.2 + j0.0
C
D
E
F
G
H
J
K
L
M
N
V
DD
= 28V, I
DQ
= 600mA, P
OUT
= 120 W
Z
IN
is the series equivalent input impedance of the device
from gate to source.
Z
LOAD
is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
Max
-
6.0
6.0
6.0
-
270
240
48
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V
GS
= 0.0 V , I
DS
= 3.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 600.0 mA
V
DS
= 10.0 V , I
DS
= 6000.0 mA , Δ V
GS
= 1.0V, 80 μs Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 600 mA, P
OUT
= 120.0 W F =175 MHz
65
-
-
2.0
3.0
-
-
-
13
60
-
1
ŋ
D
VSWR-T
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DU28120T
RF Power MOSFET Transistor
120 W, 2 - 175 MHz, 28 V
Typical Broadband Performance Curves
GAIN
VS
FREQUENCY
V
DD
=28 V I
DQ
=600 mA P
OUT
=120 W
EFFICIENCY
VS
FREQUENCY
V
DD
=28 V I
DQ
=600 mA P
OUT
=120 W
Rev. V1
30
70
EFFICIENCY (%)
GAIN (dB)
65
20
60
10
0
50
150
200
FREQUENCY (MHz)
55
0
25
50
100
150
175
200
FREQUENCY (MHz)
POWER OUTPUT
VS
POWER INPUT
V
DD
=28 V I
DQ
=50 mA
200
POWER OUTPUT (W)
150
100
50
0
0.1 0.2 0.3
30MHz
175MHz
140
POWER OUTPUT (W)
120
100
80
60
40
20
POWER OUTPUT
VS
SUPPLY VOLTAGE
F=175 MHz I
DQ
=600 mA P
IN
=3.0 W
100MHz
1
2
3
4
5
6
7
8
9
16
POWER INPUT (W)
20
25
SUPPLY VOLTAGE (V)
30
33
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DU28120T
RF Power MOSFET Transistor
120 W, 2 - 175 MHz, 28 V
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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