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S1M F2

Description
Rectifiers 1A, 1000V, GLASS PASSIVATED SMD RECTIFIER
Categorysemiconductor    Discrete semiconductor   
File Size356KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

S1M F2 Overview

Rectifiers 1A, 1000V, GLASS PASSIVATED SMD RECTIFIER

S1M F2 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryRectifiers
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseDO-214AC-2
Vr - Reverse Voltage1000 V
If - Forward Current1 A
TypeFast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1.1 V
Max Surge Current30 A
Ir - Reverse Current1 uA
Recovery Time1.5 us
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingReel
Height2.3 mm
Length4.6 mm
ProductRectifiers
Width2.83 mm
Factory Pack Quantity7500
Unit Weight0.002258 oz
S1A - S1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Non-repetitive peak reverse avalanche
energy at 25°C, I
AS
=1A, L=10mH
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
E
RSM
R
θJL
R
θJA
T
J
T
STG
27
75
- 55 to +175
- 55 to +175
40
1.1
1
50
1.5
12
5
30
85
S1A
50
35
50
S1B
100
70
100
S1D
200
140
200
S1G
400
280
400
1
30
S1J
600
420
600
S1K S1M
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
V
μA
μs
pF
mJ
°C/W
°C
°C
Document Number: DS_D1411068
Version: R15
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