BSC042N03LS G datasheet, PDF - EEWORLD Datasheet

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BSC042N03LS G: DescriptionWith the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.; Categorysemiconductor Discrete semiconductor; File Size463KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSC042N03LS G Overview

With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

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BSC042N03LS G

OptiMOS™3

Power-MOSFET

Features

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC

for target applications

• N-channel; Logic level

• Excellent gate charge x

DS(on)

product (FOM)

• Very low on-resistance

DS(on)

• Superior thermal resistance

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

BSC042N03LS G

Package

PG-TDSON-8

Marking

042N03LS

Product Summary

DS(on),max

4.2

PG-TDSON-8

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=10 V,

=25 °C

=10 V,

=100 °C

=4.5 V,

=25 °C

=4.5 V,

=100 °C

=10 V,

=25 °C,

thJA

=50 K/W

Pulsed drain current

Avalanche current, single pulse

Avalanche energy, single pulse

D,pulse

=25 °C

=40 A,

=25

=50 A,

=24 V,

di /dt =200 A/µs,

j,max

=150 °C

Value

Unit

372

Reverse diode dv /dt

dv /dt

kV/µs

Gate source voltage

±20

J-STD20 and JESD22

Rev. 2.1

page 1

2013-05-21

BSC042N03LS G Related Products

	BSC042N03LS G	BSC042N03LSGATMA1	BSC042N03LSG
Description	With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.	MOSFET N-CH 30V 93A TDSON-8	Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 4.2mΩ @ 30A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: N-channel
Is it lead-free?	-	Contains lead	Lead free
Is it Rohs certified?	-	conform to	conform to
package instruction	-	SMALL OUTLINE, R-PDSO-F8	SMALL OUTLINE, R-PDSO-F8
Contacts	-	8	8
Reach Compliance Code	-	not_compliant	compliant
ECCN code	-	EAR99	EAR99
Other features	-	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	-	50 mJ	50 mJ
Shell connection	-	DRAIN	DRAIN
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	30 V	30 V
Maximum drain current (ID)	-	20 A	20 A
Maximum drain-source on-resistance	-	0.0065 Ω	0.0065 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	-	R-PDSO-F8	R-PDSO-F8
JESD-609 code	-	e3	e3
Humidity sensitivity level	-	1	1
Number of components	-	1	1
Number of terminals	-	8	8
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	260
Polarity/channel type	-	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	372 A	372 A
Certification status	-	Not Qualified	Not Qualified
surface mount	-	YES	YES
Terminal surface	-	Tin (Sn)	Tin (Sn)
Terminal form	-	FLAT	FLAT
Terminal location	-	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	40
transistor applications	-	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON

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