Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
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