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DD800S33K2C

Description
3300V IHV 130mm Diode Module with Emitter Controlled 2 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT products.
CategoryDiscrete semiconductor    diode   
File Size205KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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DD800S33K2C Overview

3300V IHV 130mm Diode Module with Emitter Controlled 2 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT products.

DD800S33K2C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeMODULE
package instructionMODULE-4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)3.5 V
JESD-30 codeR-XUFM-X4
Number of components2
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current800 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3300 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
DD800S33K2C
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
Grenzlastintegral
I²t-value
Spitzenverlustleistung
Maximumpowerdissipation
Mindesteinschaltdauer
Minimumturn-ontime
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= -25°C
V
RRM

I
F
I
FRM
I²t



3300
3300
800
1600
220
1600
10,0
min.
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
typ.
2,80
2,80
1100
1300
500
900
490
1150
max.
3,50
3,50
V
V
A
A
µC
µC
mJ
mJ
26,0 K/kW
12,0
-40
125
K/kW
°C

V

A

A

kA²s

kW

µs
P
RQM

t
on min

CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Rückstromspitze
Peakreverserecoverycurrent
Sperrverzögerungsladung
Recoveredcharge
AbschaltenergieproPuls
Reverserecoveryenergy
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
F
= 800 A, V
GE
= 0 V
I
F
= 800 A, V
GE
= 0 V
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
proDiode/perdiode
Q
r
E
rec
R
thJC
R
thCH
T
vj op
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
preparedby:MW
approvedby:EO
dateofpublication:2016-06-17
revision:V3.0
1

DD800S33K2C Related Products

DD800S33K2C DD800S33K2CNOSA1
Description 3300V IHV 130mm Diode Module with Emitter Controlled 2 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT products. IGBT MODULE VCES 1700V 800A
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction MODULE-4 R-XUFM-X4
Contacts 4 4
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 3.5 V 3.5 V
JESD-30 code R-XUFM-X4 R-XUFM-X4
Number of components 2 2
Phase 1 1
Number of terminals 4 4
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 800 A 800 A
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 3300 V 3300 V
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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