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DF200R12W1H3_B27

Description
Fast and solder-less assembly is possible using our EasyPACK™ 1B 1200V booster IGBT modules with the proven PressFIT technology and High Speed IGBT H3.
Categorysemiconductor    Discrete semiconductor   
File Size704KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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DF200R12W1H3_B27 Overview

Fast and solder-less assembly is possible using our EasyPACK™ 1B 1200V booster IGBT modules with the proven PressFIT technology and High Speed IGBT H3.

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
DF200R12W1H3_B27
VorläufigeDaten/PreliminaryData
J
V
CES
= 1200V
I
C nom
= 30A / I
CRM
= 60A
TypischeAnwendungen
• SolarAnwendungen
ElektrischeEigenschaften
• NiedrigeSchaltverluste
MechanischeEigenschaften
Al
2
O
3
Substrat mit kleinem thermischen
Widerstand
• IntegrierterNTCTemperaturSensor
• KompaktesDesign
• PressFITVerbindungstechnik
TypicalApplications
• SolarApplications
ElectricalFeatures
• LowSwitchingLosses
MechanicalFeatures
• Al
2
O
3
SubstratewithLowThermalResistance
• IntegratedNTCtemperaturesensor
• Compactdesign
• PressFITContactTechnology
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-11-25
revision:2.0
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:CM
approvedby:MB

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