PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 25 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
NPN complement: PBSS301ND.
1.2 Features
s
s
s
s
s
Very low collector-emitter saturation resistance
Ultra low collector-emitter saturation voltage
4 A continuous collector current
Up to 15 A peak current
High efficiency due to less heat generation
1.3 Applications
s
s
s
s
s
s
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
t
p
≤
1 ms
I
C
=
−4
A;
I
B
=
−400
mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
50
Max
−20
−4
−15
70
Unit
V
A
A
mΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Philips Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
collector
collector
1
2
3
6
5
4
3
4
sym030
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3:
Ordering information
Package
Name
PBSS301PD
SC-74
Description
plastic surface mounted package; 6 leads
Version
SOT457
Type number
4. Marking
Table 4:
Marking codes
Marking code
C8
Type number
PBSS301PD
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[2]
[3]
[4]
[1]
[2] [5]
Conditions
open emitter
open base
open collector
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
Max
−20
−20
−5
−4
−15
−0.8
−2
360
600
750
1.1
2.5
Unit
V
V
V
A
A
A
A
mW
mW
mW
W
W
single pulse;
t
p
≤
1 ms
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
2 of 16
Philips Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
Table 5:
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Operated under pulsed conditions: Duty cycle
δ ≤
10 % and pulse width t
p
≤
10 ms.
1600
P
tot
(mW)
1200
(1)
006aaa270
800
(2)
(3)
400
(4)
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB; collector mounting pad for collector 6 cm
2
(3) FR4 PCB; collector mounting pad for collector 1 cm
2
(4) FR4 PCB; standard footprint
Fig 1. Power derating curves
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
3 of 16
Philips Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[2]
[3]
[4]
[1]
[2] [5]
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
350
208
160
113
50
45
Unit
K/W
K/W
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance from
junction to solder point
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Operated under pulsed conditions: Duty cycle
δ ≤
10 % and pulse width t
p
≤
10 ms.
10
3
Z
th(j-a)
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
006aaa271
10
(8)
(9)
(10)
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB; standard footprint
(1)
δ
= 1
(2)
δ
= 0.75
(3)
δ
= 0.5
(4)
δ
= 0.33
(5)
δ
= 0.2
(6)
δ
= 0.1
(7)
δ
= 0.05
(8)
δ
= 0.02
(9)
δ
= 0.01
(10)
δ
= 0
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
4 of 16
Philips Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
10
3
Z
th(j-a)
(K/W)
10
2
006aaa272
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
10
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB; mounting pad for collector 1 cm
2
(1)
δ
= 1
(2)
δ
= 0.75
(3)
δ
= 0.5
(4)
δ
= 0.33
(5)
δ
= 0.2
(6)
δ
= 0.1
(7)
δ
= 0.05
(8)
δ
= 0.02
(9)
δ
= 0.01
(10)
δ
= 0
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
5 of 16
PCB Design
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