PHP28NQ15T
N-channel TrenchMOS standard level FET
Rev. 01 — 17 August 2005
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s
Low body diode Q
r
s
Fast switching
1.3 Applications
s
DC-to-DC converters
s
DC-to-AC inverters
s
Switched-mode power supplies
s
Class-D audio
1.4 Quick reference data
s
V
DS
≤
150 V
s
R
DSon
≤
65 mΩ
s
I
D
≤
28.5 A
s
Q
GD
= 7.5 nC (typ)
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base; connected to drain
mbb076
Simplified outline
mb
Symbol
D
G
S
1 2 3
SOT78 (TO-220AB)
Philips Semiconductors
PHP28NQ15T
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2:
Ordering information
Package
Name
PHP28NQ15T
SC-46
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 9.9 A;
t
p
= 0.1 ms; V
DD
≤
150 V; R
GS
= 50
Ω;
V
GS
= 10 V; starting at T
j
= 25
°C
T
mb
= 25
°C;
V
GS
= 10 V; see
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V; see
Figure 2
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
see
Figure 3
T
mb
= 25
°C;
see
Figure 1
Conditions
25
°C ≤
T
j
≤
175
°C
25
°C ≤
T
j
≤
175
°C;
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
−55
−55
-
-
-
Max
150
150
±20
28.5
20.2
57.1
150
+175
+175
28.5
57.1
100
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
PHP28NQ15T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 August 2005
2 of 12
Philips Semiconductors
PHP28NQ15T
N-channel TrenchMOS standard level FET
120
P
der
(%)
80
03aa16
120
I
der
(%)
03aa23
80
40
40
0
0
50
100
150
T
mb
(
°
C)
200
0
0
50
100
150
200
T
mb
(°C)
P
tot
P
der
=
------------------------
×
100
%
P
°
tot
(
25 C
)
I
D
I
der
=
--------------------
×
100
%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
003aab102
t
p
= 10
µ
s
10
DC
1
100
µ
s
1 ms
10
-1
1
10
10
2
V
DS
(V)
10
3
T
mb
= 25
°C;
I
DM
is single pulse; V
GS
= 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP28NQ15T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 August 2005
3 of 12
Philips Semiconductors
PHP28NQ15T
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4:
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
vertical in free air
Min
-
-
Typ
-
60
Max
1
-
Unit
K/W
K/W
thermal resistance from junction to mounting base see
Figure 4
thermal resistance from junction to ambient
Symbol Parameter
10
Z
th(j-mb)
(K/W)
1
δ =
0.5
0.2
10
-1
0.1
0.05
0.02
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
t
p
T
P
003aab103
δ
=
t
p
T
t
t
p
(s)
10
-1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP28NQ15T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 August 2005
4 of 12
Philips Semiconductors
PHP28NQ15T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 250
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
; see
Figure 9
and
10
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain leakage current
V
DS
= 120 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
G
R
DSon
gate leakage current
gate resistance
drain-source on-state resistance
V
GS
=
±20
V; V
DS
= 0 V
f = 1 MHz
V
GS
= 10 V; I
D
= 18 A; see
Figure 6
and
8
T
j
= 25
°C
T
j
= 175
°C
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
V
GS(pl)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
total gate charge
gate-source charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
I
S
= 25 A; V
GS
= 0 V; see
Figure 13
I
S
= 20 A; dI
S
/dt =
−100
A/µs; V
GS
= 0 V
V
DS
= 75 V; R
L
= 3
Ω;
V
GS
= 10 V;
R
G
= 5.6
Ω
V
GS
= 0 V; V
DS
= 30 V; f = 1 MHz; see
Figure 14
I
D
= 25 A; V
DS
= 75 V; V
GS
= 10 V; see
Figure 11
and
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
6
7.5
5
1250
185
55
12
20
12
55
0.87
110
170
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
-
-
54
145
65
175
mΩ
mΩ
-
-
-
-
-
-
10
1.1
1
500
100
-
µA
µA
nA
Ω
2
1
-
3
-
-
4
-
4.4
V
V
V
150
135
-
-
-
-
V
V
Conditions
Min
Typ
Max
Unit
Source-drain diode
PHP28NQ15T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 August 2005
5 of 12
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