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PHP75NQ08T

Description
N-channel TrenchMOS-TM standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size65KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PHP75NQ08T Overview

N-channel TrenchMOS-TM standard level FET

PHP75NQ08T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)157 W
surface mountNO
PHP75NQ08T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 13 April 2005
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS™ technology.
1.2 Features
s
Standard level threshold
s
Very low on-state resistance
1.3 Applications
s
Motors, lamps and solenoids
s
DC-to-DC converters
s
Uninterruptible power supplies
s
General industrial applications
1.4 Quick reference data
s
V
DS
75 V
s
R
DSon
13 mΩ
s
I
D
75 A
s
Q
gd
= 15 nC (typ)
2. Pinning information
Table 1:
Pin
1
2
3
mb
gate
drain
source
mounting base; connected to drain
mbb076
Pinning
Simplified outline
mb
Description
Symbol
D
G
S
1 2 3
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