numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
75A
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.30
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.25
0.9
0.20
0.7
0.15
0.5
Note:
PDM
t1
t2
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
4-2004
0.10
0.05
0
0.3
050-7021 Rev D
0.1
0.05
10
-5
10
-4
SINGLE PULSE
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
RC MODEL
250
VGS =15 &10V
I
D
, DRAIN CURRENT (AMPERES)
APT20M20JLL
9V
Junction
temp. ( ”C)
0.0409
0.0246F
200
150
7.5V
7V
Power
(Watts)
0.225
0.406F
100
6.5
50
6V
5.5V
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
GS
0.00361
Case temperature
0.147.639F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
200
180
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
= 10V @ I = 52A
D
160
140
120
100
80
60
40
20
0
0 1
2 3
4 5 6
7 8 9 10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
TJ = +125°C
TJ = +25°C
TJ = -55°C
1.30
1.20
1.10
VGS=10V
1.00
0.90
0.80
VGS=20V
0
110
100
I
D
, DRAIN CURRENT (AMPERES)
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
20 40
60 80 100 120 140 160
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
90
80
70
60
50
40
30
20
10
0
25
1.10
1.05
1.00
0.95
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
V
D
0.90
-50
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
= 52A
= 10V
2.0
1.5
1.0
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
GS
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7021 Rev D
4-2004
415
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
100µS
APT20M20JLL
Ciss
I
D
, DRAIN CURRENT (AMPERES)
100
C, CAPACITANCE (pF)
Coss
1,000
1mS
10
10mS
100
Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 75A
200
100
TJ =+150°C
TJ =+25°C
12
VDS=40V
VDS=100V
VDS=160V
8
10
4
40 60 80 100 120 140 160 180
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
90
80
70
t
d(off)
V
DD
G
0
0
20
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
140
120
V
DD
G
= 130V
R
= 5Ω
T = 125°C
J
L = 100µH
t
d(on)
and t
d(off)
(ns)
60
50
40
30
20
10
0
20
= 130V
R
= 5Ω
t
r
and t
f
(ns)
100
80
60
40
20
t
f
t
r
T = 125°C
J
L = 100µH
t
d(on)
80
100
120
140
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
40
60
80
100
120
140
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
0
20
40
60
1400
= 130V
1200
SWITCHING ENERGY (µJ)
R
= 5Ω
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
1000
800
600
SWITCHING ENERGY (µJ)
J
2000
E
off
1500
E
on
1000
V
I
DD
4-2004
E
on
400
200
0
20
= 130V
D
J
= 100A
500
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7021 Rev D
E
off
40
60
0
0
5
80
100
120
140
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT20M20JLL
90%
10%
Gate Voltage
T 125°C
J
Gate Voltage
t
d(on)
t
r
Drain Current
t
d(off)
t
f
90%
Drain Voltage
T 125°C
J
90%
5%
Switching Energy
10%
5%
Drain Voltage
Switching Energy
10%
0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT100S20B
V
DD
I
C
V
CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Dimensions in Millimeters and (Inches)
ISOTOP
®
is a Registered Trademark of SGS Thomson.
Gate
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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